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The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Liu, Zhi-Long; Wang, Mei-Xiao; Liu, Canhua; Jia, Jin-Feng; Vogt, Patrick; Quaresima, Claudio; Ottaviani, Carlo; Olivieri, Bruno; Padova, Paola de; Lay, Guy Le

Silicon atoms deposited on Ag(111) produce various single layer silicene sheets with different buckling patterns and periodicities. Low temperature scanning tunneling microscopy reveals that one of the silicene sheets, the hypothetical √7 × √7 silicene structure, on 2√3 × 2√3 Ag(111), is inherently highly defective and displays no long-range order. Moreover, Auger and photoelectron spectroscopy measurements reveal its sudden death, to end, in a dynamic fating process at ∼300 °C. This result clarifies the real nature of the 2√3 × 2√3R(30°) silicene phase and thus helps to understand the diversity of the silicene sheets grown on Ag(111).
Published in: APL Materials, 10.1063/1.4894871, AIP Publishing