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2020-05-22T09:39:04-07:00Arbortext Advanced Print Publisher 9.0.114/W2015-01-28T09:47:11+05:30
aip.orgtrue10.1063/1.49069942015-01-28230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier
10.1063/1.4906994http://dx.doi.org/10.1063/1.4906994
doi:10.1063/1.4906994230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrierLeo BonatoElisa M. SalaGernot StrackeTobias NowozinAndré StrittmatterMohammed Nasser AjourKhaled DaqrouqDieter Bimbergaluminium compoundsdeep level transient spectroscopygallium arsenideIII-V semiconductorsindium compoundslocalised statessemiconductor diodessemiconductor quantum dots
2015-01-28trueaip.org10.1063/1.4906994
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