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Hjort_etal_310_2021.pdf.jpg17-Dec-2020A 310 nm optically pumped AlGaN vertical-cavity surface-emitting laserHjort, Filip; Enslin, Johannes; Cobet, Munise; Bergmann, Michael A.; Gustavsson, Johan; Kolbe, Tim; Knauer, Arne; Nippert, Felix; Häusler, Ines; Wagner, Markus R.; Wernicke, Tim; Kneissl, Michael; Haglund, Åsa-
Enslin_et_al-2019-physica_status_solidi_a.pdf.jpg12-Nov-2019Determination of Sapphire Off‐Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC LasersEnslin, Johannes; Knauer, Arne; Mogilatenko, Anna; Mehnke, Frank; Martens, Martin; Kuhn, Christian; Wernicke, Tim; Weyers, Markus; Kneissl, Michael-
materials-10-01396.pdf.jpg6-Dec-2017Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting DiodesKolbe, Tim; Knauer, Arne; Rass, Jens; Cho, Hyun; Hagedorn, Sylvia; Einfeldt, Sven; Kneissl, Michael; Weyers, Markus-
Feneberg_etal_Origin_2021.pdf.jpg17-May-2021Origin of defect luminescence in ultraviolet emitting AlGaN diode structuresFeneberg, Martin; Romero, Fátima; Goldhahn, Rüdiger; Wernicke, Tim; Reich, Christoph; Stellmach, Joachim; Mehnke, Frank; Knauer, Arne; Weyers, Markus; Kneissl, Michael-
Kneissl_etal_2015.pdf.jpg17-Aug-2015Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18NKusch, Gunnar; Nouf-Allehiani, M.; Mehnke, Frank; Kuhn, Christian; Edwards, Paul R.; Wernicke, Tim; Knauer, Arne; Kueller, Viola; Naresh-Kumar, G.; Weyers, Markus; Kneissl, Michael; Trager-Cowan, Carol; Martin, Robert W.-
PSSA_PSSA201901022.pdf.jpg6-Mar-2020Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light‐Emitting DiodesHagedorn, Sylvia; Walde, Sebastian; Knauer, Arne; Susilo, Norman; Pacak, Daniel; Cancellara, Leonardo; Netzel, Carsten; Mogilatenko, Anna; Hartmann, Carsten; Wernicke, Tim; Kneissl, Michael; Weyers, Markus-