Browse by Author Nowozin, Tobias
Showing results 1 to 6 of 6
| Preview | Issue Date | Title | Author(s) | Editor(s) |
 | 2015 | 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier | Bonato, Leo; Sala, Elisa M.; Stracke, Gernot; Nowozin, Tobias; Strittmatter, André; Ajour, Mohammed Nasser; Daqrouq, Khaled; Bimberg, Dieter | - |
 | 7-Feb-2013 | 800 meV localization energy in GaSb/GaAs/Al0.3Ga0.7As quantum dots | Nowozin, Tobias; Bonato, Leo; Högner, A.; Wiengarten, A.; Bimberg, Dieter; Lin, Wei-Hsun; Lin, Shih-Yen; Reyner, C. J.; Liang, Baolai L.; Huffaker, D. L. | - |
 | 27-Nov-2012 | Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer | Stracke, Gernot; Glacki, A.; Nowozin, Tobias; Bonato, Leo; Rodt, Sven; Prohl, Christopher; Lenz, Andrea; Eisele, Holger; Schliwa, Andrei; Strittmatter, André; Pohl, Udo W.; Bimberg, Dieter | - |
 | 18-Dec-2009 | Hole-based memory operation in an InAs/GaAs quantum dot heterostructure | Marent, A.; Nowozin, Tobias; Gelze, J.; Luckert, F.; Bimberg, Dieter | - |
 | 29-Jan-2009 | Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure | Nowozin, Tobias; Marent, A.; Geller, Martin; Bimberg, Dieter; Akçay, N.; Öncan, N. | - |
 | 4-Mar-2008 | A write time of 6ns for quantum dot–based memory structures | Geller, Martin; Marent, A.; Nowozin, Tobias; Bimberg, Dieter; Akçay, N.; Öncan, N. | - |