Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9624
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Main Title: Resonance fluorescence of a site-controlled quantum dot realized by the buried-stressor growth technique
Author(s): Strauß, Max
Kaganskiy, Arsenty
Voigt, Robert
Schnauber, Peter
Schulze, Jan-Hindrik
Rodt, Sven
Strittmatter, André
Reitzenstein, Stephan
Type: Article
Language Code: en
Abstract: Site-controlled growth of semiconductor quantum dots (QDs) represents a major advancement to achieve scalable quantum technology platforms. One immediate benefit is the deterministic integration of quantum emitters into optical microcavities. However, site-controlled growth of QDs is usually achieved at the cost of reduced optical quality. Here, we show that the buried-stressor growth technique enables the realization of high-quality site-controlled QDs with attractive optical and quantum optical properties. This is evidenced by performing excitation power dependent resonance fluorescence experiments at cryogenic temperatures showing QD emission linewidths down to 10 μeV. Resonant excitation leads to the observation of the Mollow triplet under CW excitation and enables coherent state preparation under pulsed excitation. Under resonant π-pulse excitation we observe clean single-photon emission associated with g(2)(0) = 0.12 limited by non-ideal laser suppression.
URI: https://depositonce.tu-berlin.de/handle/11303/10727
http://dx.doi.org/10.14279/depositonce-9624
Issue Date: 12-Mar-2017
Date Available: 17-Feb-2020
DDC Class: 530 Physik
Subject(s): fluorescence
microcavities
semiconductor quantum dots
Sponsor/Funder: EC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISITE
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 110
Issue: 11
Article Number: 111101
Publisher DOI: 10.1063/1.4978428
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 110, 111101 (2017) and may be found at https://doi.org/10.1063/1.4978428.
Appears in Collections:AG Optoelektronik und Quantenbauelemente » Publications

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