Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9630
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Main Title: Enhanced photon-extraction efficiency from InGaAs/GaAs quantum dots in deterministic photonic structures at 1.3 μm fabricated by in-situ electron-beam lithography
Author(s): Strocka, N.
Musiał, A.
Schneider, P.-I.
Mrowiński, P.
Holewa, P.
Burger, S.
Quandt, D.
Strittmatter, André
Rodt, Sven
Reitzenstein, Stephan
Sęk, G.
Type: Article
Language Code: en
Abstract: The main challenge in the development of non-classical light sources remains their brightness that limits the data transmission and processing rates as well as the realization of practical devices operating in the telecommunication range. To overcome this issue, we propose to utilize universal and flexible in-situ electron-beam lithography and hereby, we demonstrate a successful technology transfer to telecom wavelengths. As an example, we fabricate and characterize especially designed photonic structures with strain-engineered single InGaAs/GaAs quantum dots that are deterministically integrated into disc-shaped mesas. Utilizing this approach, an extraction efficiency into free-space (within a numerical aperture of 0.4) of (10±2) % has been experimentally obtained in the 1.3 μm wavelength range in agreement with finite-element method calculations. High-purity single-photon emission with g(2)(0)<0.01 from such deterministic structure has been demonstrated under quasi-resonant excitation.
URI: https://depositonce.tu-berlin.de/handle/11303/10733
http://dx.doi.org/10.14279/depositonce-9630
Issue Date: 7-Aug-2018
Date Available: 17-Feb-2020
DDC Class: 530 Physik
Subject(s): electron beam lithography
finite element analysis
gallium arsenide
III-V semiconductors
indium compounds
integrated optics
nanofabrication
nanolithography
nanophotonics
optical fabrication
photoluminescence
semiconductor growth
semiconductor quantum dots
Sponsor/Funder: DFG, SFB 787, Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: AIP Advances
Publisher: American Institute of Physics (AIP)
Publisher Place: New York
Volume: 8
Issue: 8
Article Number: 085205
Publisher DOI: 10.1063/1.5038137
EISSN: 2158-3226
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in AIP Advances 8, 085205 (2018) and may be found at https://doi.org/10.1063/1.5038137.
Appears in Collections:AG Optoelektronik und Quantenbauelemente » Publications

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