Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9637
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Main Title: Micropillars with a controlled number of site-controlled quantum dots
Author(s): Kaganskiy, Arsenty
Gericke, Fabian
Heindel, Tobias
Porte, Xavier
Reitzenstein, Stephan
Type: Article
Language Code: en
Abstract: We report on the realization of micropillars with site-controlled quantum dots (SCQDs) in the active layer. The SCQDs are grown via the buried stressor approach which allows for the positioned growth and device integration of a controllable number of QDs with high optical quality. This concept is very powerful as the number and the position of SCQDs in the cavity can be simultaneously controlled by the design of the buried-stressor. The fabricated micropillars exhibit a high degree of position control for the QDs above the buried stressor and Q-factors of up to 12 000 at an emission wavelength of around 930 nm. We experimentally analyze and numerically model the cavity Q-factor, the mode volume, the Purcell factor, and the photon-extraction efficiency as a function of the aperture diameter of the buried stressor. Exploiting these SCQD micropillars, we experimentally observe a Purcell enhancement in the single-QD regime with FP = 4.3 ± 0.3.
URI: https://depositonce.tu-berlin.de/handle/11303/10742
http://dx.doi.org/10.14279/depositonce-9637
Issue Date: 12-Feb-2018
Date Available: 17-Feb-2020
DDC Class: 530 Physik
Subject(s): aluminium compounds
gallium arsenide
III-V semiconductors
integrated optics
microcavities
micro-optics
nanofabrication
nanophotonics
optical fabrication
photoluminescence
Q-factor
semiconductor growth
semiconductor quantum dots
Sponsor/Funder: EC/FP7/615613/EU/External Quantum Control of Photonic Semiconductor Nanostructures/EXQUISITE
DFG, SFB 787, Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 112
Issue: 7
Article Number: 071101
Publisher DOI: 10.1063/1.5017692
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 112, 071101 (2018) and may be found at https://doi.org/10.1063/1.5017692.
Appears in Collections:AG Optoelektronik und Quantenbauelemente » Publications

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