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Main Title: Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement
Author(s): Vaccaro, Pablo
Alonso, Maria Isabel
Garriga, M.
Gutiérrez, Joffre
Peró, D.
Wagner, Markus R.
Reparaz, J. S.
Sotomayor Torres, C. M.
Vidal, Xavier
Carter, E. A.
Lay, P. A.
Yoshimoto, M.
Goñi, Alejandro R.
Type: Article
Language Code: en
Abstract: We deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate suspended membranes with high uniaxial tensile strain. We demonstrate a CMOS-compatible fabrication strategy to increase strain concentration and to eliminate the Ge buffer layer near the Ge/Si hetero-interface deposited at low temperature. This is achieved by a two-steps patterning and selective etching process. First, a bridge and neck shape is patterned in the Ge membrane, then the neck is thinned from both top and bottom sides. Uniaxial tensile strain values higher than 3% were measured by Raman scattering in a Ge membrane of 76 nm thickness. For the challenging thickness measurement on micrometer-size membranes suspended far away from the substrate a characterization method based on pump-and-probe reflectivity measurements was applied, using an asynchronous optical sampling technique.
Issue Date: 28-Nov-2018
Date Available: 25-Feb-2020
DDC Class: 530 Physik
Subject(s): germanium
silicon substrates
Ge membrane
membrane thickness
Sponsor/Funder: EC/FP7/628197/EU/Heat Propagation and Thermal Conductivity in Nanomaterials for Nanoscale Energy Management/HEATPRONANO
Journal Title: AIP Advances
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 8
Issue: 11
Article Number: 115131
Publisher DOI: 10.1063/1.5050674
EISSN: 2158-3226
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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