Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9730
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Main Title: Polarity in GaN and ZnO: Theory, measurement, growth, and devices
Author(s): Zúñiga-Pérez, Jesús
Consonni, Vincent
Lymperakis, Liverios
Kong, Xiang
Trampert, Achim
Fernández-Garrido, Sergio
Brandt, Oliver
Renevier, Hubert
Keller, Stacia
Hestroffer, Karine
Wagner, Markus R.
Juan Sebastián, Reparaz
Akyol, Fatih
Rajan, Siddharth
Rennesson, Stéphanie
Palacios, Tomás
Feuillet, Guy
Type: Article
Language Code: en
Abstract: The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.
URI: https://depositonce.tu-berlin.de/handle/11303/10835
http://dx.doi.org/10.14279/depositonce-9730
Issue Date: 21-Nov-2016
Date Available: 25-Feb-2020
DDC Class: 530 Physik
Subject(s): gallium nitride
zinc oxide
polarity
GaN
ZnO
polarization
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Reviews
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 3
Issue: 4
Article Number: 041303
Publisher DOI: 10.1063/1.4963919
EISSN: 1931-9401
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Rev. 3, 041303 (2016) and may be found at https://doi.org/10.1063/1.4963919.
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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