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Main Title: Auger recombination in AlGaN quantum wells for UV light-emitting diodes
Author(s): Nippert, Felix
Tollabi Mazraehno, Mohammad
Davies, Matthew J.
Hoffmann, Marc P.
Lugauer, Hans-Jürgen
Kure, Thomas
Kneissl, Michael
Hoffmann, Axel
Wagner, Markus R.
Type: Article
Language Code: en
Abstract: We show that the often observed efficiency droop in AlGaN quantum well heterostructures is an internal carrier loss process, analogous to the InGaN system. We attribute this loss process to Auger recombination, with C = 2.3 × 10−30 cm6 s−1; a similar value found commonly in InGaN-based devices. As a result, the peak internal quantum efficiency (IQE) of our structures is limited to 66%. These values were obtained by resonant excitation (time-resolved) photoluminescence (PL), avoiding common error sources in IQE measurements. The existence of strong Auger recombination implies that simple methods employed for IQE determination, such as temperature-dependent PL, may lead to erroneous values. Auger losses will have to be considered once the challenges regarding carrier injection are solved.
Issue Date: 17-Aug-2018
Date Available: 25-Feb-2020
DDC Class: 530 Physik
Subject(s): AlGaN
ultraviolet light
efficiency droop
Auger recombination
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 113
Issue: 7
Article Number: 071107
Publisher DOI: 10.1063/1.5044383
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 113, 071107 (2018) and may be found at
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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