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Main Title: Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements
Author(s): Kirste, Ronny
Hoffmann, Marc P.
Tweedie, James
Bryan, Zachary
Callsen, Gordon
Kure, Thomas
Nenstiel, Christian
Wagner, Markus R.
Collazo, Ramón
Hoffmann, Axel
Sitar, Zlatko
Type: Article
Language Code: en
Abstract: Compensation effects in metal organic chemical vapour deposition grown GaN doped with magnesium are investigated with Raman spectroscopy and photoluminescence measurements. Examining the strain sensitive E2(high) mode, an increasing compressive strain is revealed for samples with Mg-concentrations lower than 7 × 1018 cm−3. For higher Mg-concentrations, this strain is monotonically reduced. This relaxation is accompanied by a sudden decrease in crystal quality. Luminescence measurements reveal a well defined near band edge luminescence with free, donor bound, and acceptor bound excitons as well as a characteristic donor acceptor pair (DAP) luminescence. Following recent results, three acceptor bound excitons and donor acceptor pairs are identified. Along with the change of the strain, a strong modification in the luminescence of the dominating acceptor bound exciton and DAP luminescence is observed. The results from Raman spectroscopy and luminescence measurements are interpreted as fingerprints of compensation effects in GaN:Mg leading to the conclusion that compensation due to defect incorporation triggered by Mg-doping already affects the crystal properties at doping levels of around 7 × 1018 cm−3. Thereby, the generation of nitrogen vacancies is introduced as the driving force for the change of the strain state and the near band edge luminescence.
Issue Date: 8-Mar-2013
Date Available: 27-Feb-2020
DDC Class: 530 Physik
Subject(s): Raman spectroscopy
compensation effects
photoluminescence measurements
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Journal of Applied Physics
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 113
Issue: 10
Article Number: 103504
Publisher DOI: 10.1063/1.4794094
EISSN: 1089-7550
ISSN: 0021-8979
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Appl. Phys. 113, 103504 (2013) and may be found at
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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