Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9748
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Main Title: Structural and optical investigation of non-polar (1-100) GaN grown by the ammonothermal method
Author(s): Gogova, Daniela
Petrov, P. P.
Bügler, Max
Wagner, Markus R.
Nenstiel, Christian
Callsen, Gordon
Schmidbauer, Martin
Kucharski, R.
Zajac, M.
Dwilinski, R.
Phillips, M. R.
Hoffmann, Axel
Fornari, Roberto
Type: Article
Language Code: en
Abstract: We studied the structural and optical properties of state-of-the-art non-polar bulk GaN grown by the ammonothermal method. The investigated samples have an extremely low dislocation density (DD) of less than 5 × 104 cm−2, which results in very narrow high-resolution x-ray rocking curves. The a and c lattice parameters of these stress-free GaN samples were precisely determined by using an x-ray diffraction technique based on the modified Bond method. The obtained values are compared to the lattice parameters of free-standing GaN from different methods and sources. The observed differences are discussed in terms of free-electron concentrations, point defects, and DD. Micro Raman spectroscopy revealed a very narrow phonon linewidth and negligible built-in strain in accordance with the high-resolution x-ray diffraction data. The optical transitions were investigated by cathodoluminescence measurements. The analysis of the experimental data clearly demonstrates the excellent crystalline perfection of ammonothermal GaN material and its potential for fabrication of non-polar substrates for homoepitaxial growth of GaN based device structures.
URI: https://depositonce.tu-berlin.de/handle/11303/10853
http://dx.doi.org/10.14279/depositonce-9748
Issue Date: 29-May-2013
Date Available: 27-Feb-2020
DDC Class: 530 Physik
Subject(s): GaN
ammonothermal method
x-ray diffraction
Raman spectroscopy
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Journal of Applied Physics
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 113
Issue: 20
Article Number: 203513
Publisher DOI: 10.1063/1.4807581
EISSN: 1089-7550
ISSN: 0021-8979
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 113, 203513 (2013) and may be found at https://doi.org/10.1063/1.4807581.
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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