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Main Title: Phonon plasmon interaction in ternary group-III-nitrides
Author(s): Kirste, Ronny
Mohn, Stefan
Wagner, Markus R.
Reparaz, Juan S.
Hoffmann, Axel
Type: Article
Language Code: en
Abstract: Phonon-plasmon-coupling in the ternary group-III-nitrides InGaN and AlGaN is investigated experimentally and theoretically. Based on the observation of broadening and shifting of the A1(LO) mode in AlGaN upon Si-doping, a lineshape analysis was performed to determine the carrier concentration. The results obtained by this method are in excellent agreement to those from Hall measurements, confirming the validity of the employed model. Finally, neglecting phonon and plasmon damping, the Raman shift of the A1(LO) mode in dependence of the carrier concentration for AlGaN and InGaN is calculated. This enables a fast and contactless determination of carrier concentrations in the future.
Issue Date: 26-Jul-2012
Date Available: 27-Feb-2020
DDC Class: 530 Physik
Subject(s): phonon-plasmon-coupling
ternary group-III-nitrides
Raman spectroscopy
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 101
Issue: 4
Article Number: 041909
Publisher DOI: 10.1063/1.4739415
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 101, 041909 (2012) and may be found at
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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