Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9751
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Main Title: Decay dynamics of excitonic polarons in InAs/GaAs quantum dots
Author(s): Werner, Stefan
Reparaz, Juan Sebastián
Wagner, Markus R.
Zimmer, Patrick
Ledentsov, Nikolai N.
Kabuß, Julia
Dachner, M. R.
Richter, Marten
Knorr, Andreas
Thomsen, Christian
Hoffmann, Axel
Type: Article
Language Code: en
Abstract: We present time-resolved studies of the exciton-phonon interaction in self-assembled InAs/GaAs quantum dots. Different scattering and luminescence processes were investigated by time-resolved spectroscopy exciting resonantly into the quantum dot’s electronic structure. By studying the characteristic decay times of the ground state and of several phonon-assisted recombinations we were able to distinguish a resonant Raman process from a phonon-assisted photoluminescence process which are always simultaneously present and can interfere with each other. While lifetimes under 30 ps were observed for the coherent Raman process, the incoherent phonon-assisted recombination exhibited typical lifetimes of around 1 ns independently of the excitation energy. We conclude that under resonant excitation the dominant radiative recombination process in this system always involves an electronic state of the ground state of the quantum dot’s electronic structure. Combining temperature-dependent and time-resolved measurements we show that a weak phonon-bottleneck is present in the low temperature regime (< 130 K), while it disappears for higher temperatures.
URI: https://depositonce.tu-berlin.de/handle/11303/10856
http://dx.doi.org/10.14279/depositonce-9751
Issue Date: 3-Oct-2011
Date Available: 27-Feb-2020
DDC Class: 530 Physik
Subject(s): Raman process
excitonic polarons
lifetime
decay dynamics
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
DFG, 53182490, EXC 314: Unifying Concepts in Catalysis
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Journal of Applied Physics
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 110
Issue: 7
Article Number: 074303
Publisher DOI: 10.1063/1.3639310
EISSN: 1089-7550
ISSN: 0021-8979
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 110, 074303 (2011) and may be found at https://doi.org/10.1063/1.3639310.
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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