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Main Title: Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN
Author(s): Kirste, Ronny
Ramón, Collazo
Callsen, Gordon
Wagner, Markus R.
Kure, Thomas
Reparaz, Juan Sebastián
Mita, Seji
Xie, Jinqiao
Rice, Anthony
Tweedie, James
Sitar, Zlatko
Hoffmann, Axel
Type: Article
Language Code: en
Abstract: We report on fundamental structural and optical properties of lateral polarity junctions in GaN. GaN with Ga- to N-polar junctions was grown on sapphire using an AlN buffer layer. Results from scanning electron microscopy and Raman spectroscopy measurements indicate a superior quality of the Ga-polar GaN. An extremely strong luminescence signal is observed at the inversion domain boundary (IDB). Temperature dependent micro photoluminescence measurements are used to reveal the recombination processes underlying this strong emission. At 5 K the emission mainly arises from a stripe along the inversion domain boundary with a thickness of 4-5 μm. An increase of the temperature initially leads to a narrowing to below 2 μm emission area width followed by a broadening at temperatures above 70 K. The relatively broad emission area at low temperatures is explained by a diagonal IDB. It is shown that all further changes in the emission area width are related to thermalization effects of carriers and defects attracted to the IDB. The results are successfully used to confirm a theoretical model for GaN based lateral polarity junctions. Due to the strong and pronounced emission of IDBs even at elevated temperatures, it is demonstrated that lateral polarity junctions exhibit a strong potential for future high efficiency devices.
Issue Date: 2-Nov-2011
Date Available: 27-Feb-2020
DDC Class: 530 Physik
Subject(s): photoluminescence
lateral polarity junctions
Raman spectroscopy
inversion domain boundary
temperature dependent
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Journal of Applied Physics
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 110
Issue: 9
Article Number: 093503
Publisher DOI: 10.1063/1.3656987
EISSN: 1089-7550
ISSN: 0021-8979
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 110, 093503 (2011) and may be found at
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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