Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9796
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Main Title: Polariton effects in the dielectric function of ZnO excitons obtained by ellipsometry
Author(s): Cobet, Munise
Cobet, Christoph
Wagner, Markus R.
Esser, Norbert
Thomsen, Christian
Hoffmann, Axel
Type: Article
Language Code: en
Abstract: The complex dielectric tensor of ZnO in the regime of the excitonic transitions is determined with ellipsometry and analyzed concerning the quantization of the electromagnetic field in terms of coupled polariton-eigenmodes. Negative sections in the real part indicate the significant formation of polaritons for the dipole-allowed excitons of the three upper valence-bands Γ7,Γ9,Γ7. The transverse-longitudinal splittings which separate the upper polariton branch from the lower branch, corresponding to the k-vector of the used light, are deduced precisely for each subband. Mainly for E∥c, additional absorption peaks are observed at the longitudinal B-exciton and closely above. One is considered to be a mixed-mode and the other is seen as a consequence of interference effects in an exciton free surface layer which is also visible in reflectance anisotropy spectroscopy.
URI: https://depositonce.tu-berlin.de/handle/11303/10903
http://dx.doi.org/10.14279/depositonce-9796
Issue Date: 19-Jan-2010
Date Available: 10-Mar-2020
DDC Class: 530 Physik
Subject(s): ZnO
polariton effect
dielectric function
reflectance anisotropy spectroscopy
Sponsor/Funder: EC/FP7/218570/EU/MULTIFUNCTIONAL NANOMATERIALS CHARACTERISATION EXPLOITING ELLIPSOMETRY and POLARIMETRY/NANOCHARM
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 96
Issue: 3
Article Number: 031904
Publisher DOI: 10.1063/1.3284656
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 031904 (2010) and may be found at https://doi.org/10.1063/1.3284656.
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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