Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9799
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Main Title: Reduction of the transverse effective charge of optical phonons in ZnO under pressure
Author(s): Reparaz, Juan Sebastián
Muniz, Luis Antonio
Wagner, Markus R.
Goñi, Alejandro R.
Alonso, Maria Isabel
Hoffmann, Axel
Meyer, Bruno K.
Type: Article
Language Code: en
Abstract: From Raman scattering on a-plane wurtzite ZnO crystals we obtained a decreasing splitting between longitudinal and transversal optical phonons with A1 and E1 symmetry as a function of hydrostatic pressure up to 5.5 GPa. Consequently, the transverse effective charge (e∗T) exhibits a strong reduction with increasing pressure, yielding 2.17–14.6×10−3 P/GPa and 2.04–13.7×10−3 P/GPa (in units of the elementary charge) for the A1 and E1 phonons, respectively. We find a clear systematic in the linear pressure coefficient of e∗T with bond polarity for the series of wide-band gap semiconductors SiC, AlN, GaN, and ZnO.
URI: https://depositonce.tu-berlin.de/handle/11303/10906
http://dx.doi.org/10.14279/depositonce-9799
Issue Date: 9-Jun-2010
Date Available: 10-Mar-2020
DDC Class: 530 Physik
Subject(s): ZnO crystals
a-plane wurtzite ZnO
semiconductor
pressure dependence
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 96
Issue: 23
Article Number: 231906
Publisher DOI: 10.1063/1.3447798
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 96, 231906 (2010) and may be found at https://doi.org/10.1063/1.3447798."
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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