Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9806
For citation please use:
Main Title: Spatial clustering of defect luminescence centers in Si-doped low resistivity Al0.82Ga0.18N
Author(s): Kusch, Gunnar
Nouf-Allehiani, M.
Mehnke, Frank
Kuhn, Christian
Edwards, Paul R.
Wernicke, Tim
Knauer, Arne
Kueller, Viola
Naresh-Kumar, G.
Weyers, Markus
Kneissl, Michael
Trager-Cowan, Carol
Martin, Robert W.
Type: Article
Language Code: en
Abstract: A series of Si-doped AlN-rich AlGaN layers with low resistivities was characterized by a combination of nanoscale imaging techniques. Utilizing the capability of scanning electron microscopy to reliably investigate the same sample area with different techniques, it was possible to determine the effect of doping concentration, defect distribution, and morphology on the luminescence properties of these layers. Cathodoluminescence shows that the dominant defect luminescence depends on the Si-doping concentration. For lower doped samples, the most intense peak was centered between 3.36 eV and 3.39 eV, while an additional, stronger peak appears at 3 eV for the highest doped sample. These peaks were attributed to the (VIII-ON)2− complex and the V3−III vacancy, respectively. Multimode imaging using cathodoluminescence, secondary electrons, electron channeling contrast, and atomic force microscopy demonstrates that the luminescence intensity of these peaks is not homogeneously distributed but shows a strong dependence on the topography and on the distribution of screw dislocations.
URI: https://depositonce.tu-berlin.de/handle/11303/10913
http://dx.doi.org/10.14279/depositonce-9806
Issue Date: 17-Aug-2015
Date Available: 10-Mar-2020
DDC Class: 530 Physik
Subject(s): spatial clustering
nanoscale imaging techniques
Si-doped
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
BMBF, 13N12587, Photonische Plattformtechnologie zur ultrasensitiven und hochspezifischen biochemischen Sensorik auf Basis neuartiger UV-LEDs (UltraSens)
License: https://creativecommons.org/licenses/by/3.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 107
Issue: 7
Article Number: 072103
Publisher DOI: 10.1063/1.4928667
EISSN: 1077-3118
ISSN: 0003-6951
Appears in Collections:FG Experimentelle Nanophysik und Photonik » Publications

Files in This Item:
Kneissl_etal_2015.pdf
Format: Adobe PDF | Size: 1.67 MB
DownloadShow Preview
Thumbnail

Item Export Bar

This item is licensed under a Creative Commons License Creative Commons