Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9819
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Main Title: Electron-beam-induced current measurements with applied bias provide insight to locally resolved acceptor concentrations at p-n junctions
Author(s): Abou-Ras, Daniel
Schaefer, Norbert
Baldaz, N.
Brunken, Stephan
Boit, Christian
Type: Article
Language Code: en
Abstract: Electron-beam-induced current (EBIC) measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short-circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO/CdS/CuInSe2/Mo stacks exhibiting p-n junctions with different net doping densities in the CuInSe2 layers, values for the width of the space-charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance-voltage measurements.
URI: https://depositonce.tu-berlin.de/handle/11303/10926
http://dx.doi.org/10.14279/depositonce-9819
Issue Date: 31-Jul-2015
Date Available: 16-Mar-2020
DDC Class: 530 Physik
Subject(s): electron-beam-induced current
measurement
local electrical property
electrical junction
p-n junction
License: https://creativecommons.org/licenses/by/3.0/
Journal Title: AIP Advances
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 5
Article Number: 077191
Publisher DOI: 10.1063/1.4928097
EISSN: 2158-3226
Appears in Collections:FG Halbleiterbauelemente » Publications

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