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Main Title: Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
Author(s): Podemski, Paweł
Musiał, Anna
Gawarecki, Krzysztof
Marynski, Aleksander
Gontar, Przemysław
Bercha, Artem
Trzeciakowski, Witold A.
Srocka, Nicole
Heuser, Tobias
Quandt, David
Strittmatter, André
Rodt, Sven
Reitzenstein, Stephan
Sęk, Grzegorz
Type: Article
Language Code: en
Abstract: The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. The observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between the s-shell and the p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined state calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band k·p model. On this basis, the experimental observation is attributed mainly to changes in the indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot whose electronic structure is the most suitable for a given nanophotonic application.
Issue Date: 16-Jan-2020
Date Available: 23-Apr-2020
DDC Class: 530 Physik
Subject(s): InGaAs/GaAs
quantum dots
electronic structure
metalorganic chemical vapor deposition
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 116
Issue: 2
Article Number: 023102
Publisher DOI: 10.1063/1.5124812
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 116, 023102 (2020) and may be found at
Appears in Collections:AG Optoelektronik und Quantenbauelemente » Publications

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