Please use this identifier to cite or link to this item:
For citation please use:
Main Title: Equivalent Circuit Model of High-Performance VCSELs
Author(s): Bou Sanayeh, Marwan
Hamad, Wissam
Hofmann, Werner
Type: Article
Language Code: en
Abstract: In this work, a general equivalent circuit model based on the carrier reservoir splitting approach in high-performance multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. This model accurately describes the intrinsic dynamic behavior of these VCSELs for the case where the lasing modes do not share a common carrier reservoir. Moreover, this circuit model is derived from advanced multi-mode rate equations that take into account the effect of spatial hole-burning, gain compression, and inhomogeneity in the carrier distribution between the lasing mode ensembles. The validity of the model is confirmed through simulation of the intrinsic modulation response of these lasers.
Issue Date: 18-Jan-2020
Date Available: 29-Apr-2020
DDC Class: 530 Physik
Subject(s): high-speed VCSELs
multi-mode VCSELs
intrinsic laser dynamics
equivalent circuit modeling
intrinsic modulation response
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
DFG, 414044773, Open Access Publizieren 2019 - 2020 / Technische Universität Berlin
Journal Title: Photonics
Publisher: MDPI
Publisher Place: Basel
Volume: 7
Issue: 1
Article Number: 13
Publisher DOI: 10.3390/photonics7010013
EISSN: 2304-6732
Appears in Collections:FG Technologie nanophotonischer Bauelemente » Publications

Files in This Item:
Format: Adobe PDF | Size: 1.37 MB
DownloadShow Preview

Item Export Bar

This item is licensed under a Creative Commons License Creative Commons