Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-9958
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Main Title: Electronic excitations stabilized by a degenerate electron gas in semiconductors
Author(s): Nenstiel, Christian
Callsen, Gordon
Nippert, Felix
Kure, Thomas
Schlichting, Sarah
Jankowski, Nadja
Hoffmann, M. P.
Dadgar, Armin
Fritze, S.
Krost, A.
Wagner, Markus R.
Hoffmann, Axel
Bechstedt, Friedhelm
Type: Article
Language Code: en
Abstract: Excitons in semiconductors and insulators consist of fermionic subsystems, electrons and holes, whose attractive interaction facilitates bound quasiparticles with quasi-bosonic character. In the presence of a degenerate electron gas, such excitons dissociate due to free carrier screening. Despite their absence, we found pronounced emission traces in the below-band-edge region of bulk, germanium-doped GaN up to a temperature of 100 K, mimicking sharp spectral features at high free electron concentrations (3.4E19–8.9E19 cm−3). Our interpretation of the data suggests that a degenerate, three-dimensional electron gas stabilizes a novel class of quasiparticles, which we name collexons. These many-particle complexes are formed by exchange of electrons with the Fermi gas. The potential observation of collexons and their stabilization with rising doping concentration is enabled by high crystal quality due to the almost ideal substitution of host atoms with dopants.
URI: https://depositonce.tu-berlin.de/handle/11303/11070
http://dx.doi.org/10.14279/depositonce-9958
Issue Date: 26-Jul-2018
Date Available: 4-May-2020
DDC Class: 530 Physik
Subject(s): semiconductor
degenerate electron gas
electronic excitation
fermions
Sponsor/Funder: DFG, 43659573, SFB 787: Semiconductor Nanophotonics: Materials, Models, Devices
License: https://creativecommons.org/licenses/by/4.0/
Journal Title: Communications Physics
Publisher: Springer Nature
Publisher Place: London
Volume: 1
Article Number: 38
Publisher DOI: 10.1038/s42005-018-0033-4
EISSN: 2399-3650
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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