Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-10032
For citation please use:
Full metadata record
DC FieldValueLanguage
dc.contributor.authorTkach, Alexander-
dc.contributor.authorKehlberger, Andreas-
dc.contributor.authorBüttner, Felix-
dc.contributor.authorJakob, Gerhard-
dc.contributor.authorEisebitt, Stefan-
dc.contributor.authorKläui, Mathias-
dc.date.accessioned2020-05-18T16:12:54Z-
dc.date.available2020-05-18T16:12:54Z-
dc.date.issued2015-02-10-
dc.identifier.issn0003-6951-
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/11141-
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-10032-
dc.descriptionThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 062404 (2015) and may be found at https://doi.org/10.1063/1.4907775en
dc.description.abstractThis study reports the magnetotransport and magnetic properties of 20 nm-thick polycrystalline Ni films deposited by magnetron sputtering on unpoled piezoelectric (011) [PbMg1/3Nb2/3O3]0.68-[PbTiO3]0.32 (PMN-PT) substrates. The longitudinal magnetoresistance (MR) of the Ni films on (011) PMN-PT, measured at room temperature in the magnetic field range of −0.3 T < μ0H < 0.3 T, is found to depend on the crystallographic direction and polarization state of piezosubstrate. Upon poling the PMN-PT substrate, which results in a transfer of strain to the Ni film, the MR value decreases by factor of 20 for the current along [100] of PMN-PT and slightly increases for the [011⎯⎯] current direction. Simultaneously, a strong increase (decrease) in the field value, where the MR saturates, is observed for the [011⎯⎯] ([100]) current direction. The anisotropic magnetoresistance is also strongly affected by the remanent strain induced by the electric field pulses applied to the PMN-PT in the non-linear regime revealing a large (132 mT) magnetic anisotropy field. Applying a critical electric field of 2.4 kV/cm, the anisotropy field value changes back to the original value, opening a path to voltage-tuned magnetic field sensor or storage devices. This strain mediated voltage control of the MR and its dependence on the crystallographic direction is correlated with the results of magnetization reversal measurements.en
dc.description.sponsorshipEC/FP7/246102/EU/Interfacing Oxides/IFOXen
dc.description.sponsorshipDFG, 49741853, GSC 266: MAterialwissenschaften IN MainZen
dc.description.sponsorshipEC/FP7/208162/EU/Spin currents in magnetic nanostructures/MASPICen
dc.language.isoenen
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.othermagnetic propertiesen
dc.subject.otherthin filmsen
dc.subject.othermagnetoresistanceen
dc.subject.otherpiezoelectricityen
dc.titleElectric field modification of magnetotransport in Ni thin films on (011) PMN-PT piezosubstratesen
dc.typeArticleen
tub.accessrights.dnbfreeen
tub.publisher.universityorinstitutionTechnische Universität Berlinen
dc.identifier.eissn1077-3118-
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.1063/1.4907775en
dcterms.bibliographicCitation.journaltitleApplied Physics Lettersen
dcterms.bibliographicCitation.originalpublisherplaceMelville, NYen
dcterms.bibliographicCitation.volume106en
dcterms.bibliographicCitation.originalpublishernameAmerican Institute of Physics (AIP)en
dcterms.bibliographicCitation.issue6en
dcterms.bibliographicCitation.articlenumber062404en
Appears in Collections:FG Röntgenoptik und Nanometer-Optik » Publications

Files in This Item:
tkach_et_2015.pdf
Format: Adobe PDF | Size: 1.6 MB
DownloadShow Preview
Thumbnail

Item Export Bar

Items in DepositOnce are protected by copyright, with all rights reserved, unless otherwise indicated.