Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-10087
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Main Title: 230 s room-temperature storage time and 1.14 eV hole localization energy in In0.5Ga0.5As quantum dots on a GaAs interlayer in GaP with an AlP barrier
Author(s): Bonato, Leo
Sala, Elisa M.
Stracke, Gernot
Nowozin, Tobias
Strittmatter, André
Ajour, Mohammed Nasser
Daqrouq, Khaled
Bimberg, Dieter
Type: Article
Language Code: en
Abstract: A GaP n+p-diode containing In0.5Ga0.5As quantum dots (QDs) and an AlP barrier is characterized electrically, together with two reference samples: a simple n+p-diode and an n+p-diode with AlP barrier. Localization energy, capture cross-section, and storage time for holes in the QDs are determined using deep-level transient spectroscopy. The localization energy is 1.14(±0.04) eV, yielding a storage time at room temperature of 230(±60) s, which marks an improvement of 2 orders of magnitude compared to the former record value in QDs. Alternative material systems are proposed for still higher localization energies and longer storage times.
URI: https://depositonce.tu-berlin.de/handle/11303/11199
http://dx.doi.org/10.14279/depositonce-10087
Issue Date: 2015
Date Available: 22-May-2020
DDC Class: 530 Physik
Subject(s): semiconductors
band gap
quantum dots
Arrhenius plot
electric power
nonvolatile memory
activation energies
neutron cross section
phonons
deep level transient spectroscopy
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 106
Issue: 4
Article Number: 42102
Publisher DOI: 10.1063/1.4906994
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 042102 (2015) and may be found at https://doi.org/10.1063/1.4906994.
Appears in Collections:Inst. Festkörperphysik » Publications

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