Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-10090
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Main Title: Growth and structure of In0.5Ga0.5Sb quantum dots on GaP(001)
Author(s): Sala, Elisa M.
Stracke, G.
Selve, S.
Niermann, T.
Lehmann, M.
Schlichting, S.
Nippert, Felix
Callsen, G.
Strittmatter, André
Bimberg, Dieter
Type: Article
Language Code: en
Abstract: Stranski-Krastanov (SK) growth of In0.5Ga0.5Sb quantum dots (QDs) on GaP(001) by metalorganic vapor phase epitaxy is demonstrated. A thin GaAs interlayer prior to QD deposition enables QD nucleation. The impact of a short Sb-flush before supplying InGaSb is investigated. QD growth gets partially suppressed for GaAs interlayer thicknesses below 6 monolayers. QD densities vary from 5 × 109 to 2 × 1011 cm−2 depending on material deposition and Sb-flush time. When In0.5Ga0.5Sb growth is carried out without Sb-flush, the QD density is generally decreased, and up to 60% larger QDs are obtained.
URI: https://depositonce.tu-berlin.de/handle/11303/11202
http://dx.doi.org/10.14279/depositonce-10090
Issue Date: 2016
Date Available: 22-May-2020
DDC Class: 530 Physik
Subject(s): emission spectroscopy
flash memory
quantum dots
chemical elements
lasers
transmission electron microscopy
epitaxy
thin film growth
chemical vapor deposition
semiconductors
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 109
Issue: 10
Article Number: 102102
Publisher DOI: 10.1063/1.4962273
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 109, 102102 (2016) and may be found at https://doi.org/10.1063/1.4962273
Appears in Collections:Inst. Festkörperphysik » Publications

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