Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-10095
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Main Title: Beam quality improvement of high-power semiconductor lasers using laterally inhomogeneous waveguides
Author(s): Miah, Mohammad Jarez
Strohmaier, S.
Urban, G.
Bimberg, Dieter
Type: Article
Language Code: en
Abstract: High-brightness vertical broad-area edge-emitting (HiBBEE) semiconductor lasers in the 1060 nm wavelength range with excellent beam quality in both lateral and vertical directions are presented. An approach to modify the thresholds of the transverse lateral modes of ridge-waveguide (RW) lasers is investigated. It has been experimentally shown that inhomogeneities in both sides of the ridges increase optical losses of the higher-order lateral modes as compared to the fundamental mode. The resulting enhancement in the contrast of the optical losses favors the emission of the fundamental mode and improves the beam quality. Reference RW HiBBEE lasers with a 15 μm wide conventional ridge and a 2.0 mm long cavity provide laterally multi-lateral mode emission which is typical for RW lasers with such wide and homogeneous ridges. On the other hand, RW HiBBEE lasers with triangular-shaped corrugations in both sides of 15 μm wide ridges provide single-lateral mode emission across a wide current range and improve the lateral M2 factor by more than a factor of 2 in the investigated current range. The corrugated RW HiBBEE lasers provide an almost 2 times higher brightness than the reference RW lasers.
URI: https://depositonce.tu-berlin.de/handle/11303/11207
http://dx.doi.org/10.14279/depositonce-10095
Issue Date: 2018
Date Available: 22-May-2020
DDC Class: 530 Physik
Subject(s): semiconductor lasers
laser
High-brightness vertical broad-area edge-emitting
HiBBEE
semiconductors
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Publisher Place: Melville, NY
Volume: 113
Issue: 22
Article Number: 221107
Publisher DOI: 10.1063/1.5054645
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 113, 221107 (2018) and may be found at https://doi.org/10.1063/1.5054645.
Appears in Collections:Inst. Festkörperphysik » Publications

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