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dc.contributor.authorGreif, Ludwig Albrecht Thorsten-
dc.contributor.authorJagsch, Stefan Thomas-
dc.contributor.authorWagner, Markus R.-
dc.contributor.authorSchliwa, Andrei-
dc.date.accessioned2020-08-21T05:32:19Z-
dc.date.available2020-08-21T05:32:19Z-
dc.date.issued2018-11-02-
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/11585-
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-10474-
dc.description.abstractThe emission directionality of stacks of coupled quantum dots (QDs) is investigated within the framework of 8-band k·p-theory including strain and strain-induced piezoelectricity up to second order. Using an artificial cuboidal QD, we show that the degree of radiation anisotropy can be tuned from −33% to nearly +60% via the structure’s vertical aspect ratio. We then demonstrate that these findings can be transferred to stacked InGaAs QDs whose emission directionality is tailored (i) via the interdot coupling strength given by the separating barrier width and (ii) the number of stacked QDs. Our results enable the design and optimization of top and edge emitters based on stacked QDs.en
dc.description.sponsorshipDFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelementeen
dc.language.isoenen
dc.relation.ispartof10.14279/depositonce-9133-
dc.relation.isreferencedby10.14279/depositonce-10409-
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.ddc530 Physikde
dc.subject.otherself-assembled quantum dotsen
dc.subject.otherradiation patternen
dc.subject.otherk·p-theoryen
dc.subject.otherlight-hole ground stateen
dc.subject.othervalence band mixingen
dc.titleTuning the Emission Directionality of Stacked Quantum Dotsen
dc.typeArticleen
tub.accessrights.dnbfreeen
tub.publisher.universityorinstitutionTechnische Universität Berlinen
dc.identifier.eissn2330-4022-
dc.type.versionacceptedVersionen
dcterms.bibliographicCitation.doi10.1021/acsphotonics.8b00956en
dcterms.bibliographicCitation.journaltitleACS Photonicsen
dcterms.bibliographicCitation.originalpublisherplaceWashington, DCen
dcterms.bibliographicCitation.volume5en
dcterms.bibliographicCitation.pageend4845en
dcterms.bibliographicCitation.pagestart4838en
dcterms.bibliographicCitation.originalpublishernameAmerican Chemical Society (ACS)en
dcterms.bibliographicCitation.issue12en
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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