Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-10902
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Main Title: Radiative recombination of confined electrons at the MgZnO/ZnO heterojunction interface
Author(s): Choi, Sumin
Rogers, David J.
Sandana, Eric V.
Bove, Philippe
Teherani, Ferechteh H.
Nenstiel, Christian
Hoffmann, Axel
McClintock, Ryan
Razeghi, Manijeh
Look, David
Gentle, Angus
Phillips, Matthew R.
Ton-That, Cuong
Type: Article
Language Code: en
Abstract: We investigate the optical signature of the interface in a single MgZnO/ZnO heterojunction, which exhibits two orders of magnitude lower resistivity and 10 times higher electron mobility compared with the MgZnO/Al2O3 film grown under the same conditions. These impressive transport properties are attributed to increased mobility of electrons at the MgZnO/ZnO heterojunction interface. Depth-resolved cathodoluminescence and photoluminescence studies reveal a 3.2 eV H-band optical emission from the heterointerface, which exhibits excitonic properties and a localization energy of 19.6 meV. The emission is attributed to band-bending due to the polarization discontinuity at the interface, which leads to formation of a triangular quantum well and localized excitons by electrostatic coupling.
URI: https://depositonce.tu-berlin.de/handle/11303/12022
http://dx.doi.org/10.14279/depositonce-10902
Issue Date: 7-Aug-2017
Date Available: 19-Nov-2020
DDC Class: 530 Physik
Subject(s): conductivity
MgZnO/ZnO heterointerface
luminescence
electron mobility
License: https://creativecommons.org/licenses/by/4.0/
Journal Title: Scientific Reports
Publisher: Nature Publishing Group
Publisher Place: London
Volume: 7
Article Number: 7457
Publisher DOI: 10.1038/s41598-017-07568-z
EISSN: 2045-2322
Appears in Collections:Inst. Festkörperphysik » Publications

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