Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-11593
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Main Title: Isotopic study of Raman active phonon modes in β-Ga2O3
Author(s): Janzen, Benjamin M.
Mazzolini, Piero
Gillen, Roland
Falkenstein, Andreas
Martin, Manfred
Tornatzky, Hans
Maultzsch, Janina
Bierwagen, Oliver
Wagner, Markus R.
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/12793
http://dx.doi.org/10.14279/depositonce-11593
License: https://creativecommons.org/licenses/by-nc/3.0/
Abstract: Holding promising applications in power electronics, the ultra-wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in β-Ga2O3 provides insights into fundamental material properties such as crystal structure and orientation and can contribute to the identification of dopants and point defects. We investigate the Raman active phonon modes of β-Ga2O3 in two different oxygen isotope compositions (16O,18O) by experiment and theory: By carrying out polarized micro-Raman spectroscopy measurements on the (010) and ([2 with combining macron]01) planes, we determine the frequencies of all 15 Raman active phonons for both isotopologues. The measured frequencies are compared with the results of density functional perturbation theory (DFPT) calculations. In both cases, we observe a shift of Raman frequencies towards lower energies upon substitution of 16O with 18O. By quantifying the relative frequency shifts of the individual Raman modes, we identify the atomistic origin of all modes (Ga–Ga, Ga–O or O–O) and present the first experimental confirmation of the theoretically calculated energy contributions of O lattice sites to Raman modes. The DFPT results enable the identification of Raman modes that are dominated by the different, inequivalent O- or Ga-atoms of the unit cell. We find that oxygen substitution on the OIII site leads to an elevated relative mode frequency shift compared to OI and OII sites. This study presents a blueprint for the future identification of different point defects in Ga2O3 by Raman spectroscopy.
Subject(s): power electronics
phonon modes
Raman active phonon modes
Issue Date: 11-Jan-2021
Date Available: 11-Mar-2021
Language Code: en
DDC Class: 530 Physik
Sponsor/Funder: TU Berlin, Open-Access-Mittel – 2021
DFG, 446185170, Kontrolle von Punktdefekten während der Molekularstrahlepitaxie von dünnen Ga2O3 Schichten
Journal Title: Journal of Materials Chemistry C
Publisher: Royal Society of Chemistry
Volume: 9
Issue: 7
Publisher DOI: 10.1039/D0TC04101G
Page Start: 2311
Page End: 2320
EISSN: 2050-7534
ISSN: 2050-7526
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik » AG Halbleiter Nanophononik und Nanophotonik
Appears in Collections:Technische Universität Berlin » Publications

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