Please use this identifier to cite or link to this item:
For citation please use:
Main Title: Decay mechanisms in CdS‐buffered Cu(In,Ga)Se2 thin‐film solar cells after exposure to thermal stress: Understanding the role of Na
Author(s): Yetkin, Hasan A.
Kodalle, Tim
Bertram, Tobias
Villanueva‐Tovar, Alejandra
Rusu, Marin
Klenk, Reiner
Szyszka, Bernd
Schlatmann, Rutger
Kaufmann, Christian A.
Type: Article
Abstract: Due to their tunable bandgap energy, Cu(In,Ga)Se2 (CIGSe) thin‐film solar cells are an attractive option for use as bottom devices in tandem configurations. In monolithic tandem devices, the thermal stability of the bottom device is paramount for reliable application. Ideally, it will permit the processing of a top device at the required optimum process temperature. Here, we investigate the degradation behavior of chemical bath deposited (CBD) CdS‐buffered CIGSe thin‐film solar cells with and without Na incorporation under thermal stress in ambient air and vacuum with the aim to gain a more detailed understanding of their degradation mechanisms. For the devices studied, we observe severe degradation after annealing at 300°C independent of the atmosphere. The electrical and compositional properties of the samples before and after a defined application of thermal stress are studied. In good agreement with literature reports, we find pronounced Cd diffusion into the CIGS absorber layer. In addition, for Na‐containing samples, the observed degradation can be mainly explained by the formation of Na‐induced acceptor states in the TCO front contact and a back contact barrier formation due to the out‐diffusion of Na. Supported by numerical device simulation using SCAPS‐1D, various possible degradation models are discussed and correlated with our findings.
Subject(s): CdS buffer layer
degradation mechanism
elemental interdiffusion
thermal stress
Issue Date: 26-May-2021
Date Available: 17-Sep-2021
Language Code: en
DDC Class: 690 Hausbau, Bauhandwerk
Journal Title: Progress in Photovoltaics: Research and Applications
Publisher: Wiley
Volume: 29
Issue: 9
Publisher DOI: 10.1002/pip.3438
Page Start: 1034
Page End: 1053
EISSN: 1099-159X
ISSN: 1062-7995
TU Affiliation(s): Fak. 4 Elektrotechnik und Informatik » Inst. Hochfrequenz- und Halbleiter-Systemtechnologien » FG Technologie für Dünnschicht-Bauelemente
Appears in Collections:Technische Universität Berlin » Publications

Files in This Item:
Format: Adobe PDF | Size: 8.23 MB
DownloadShow Preview

Item Export Bar

This item is licensed under a Creative Commons License Creative Commons