Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-12652
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Main Title: Origin of defect luminescence in ultraviolet emitting AlGaN diode structures
Author(s): Feneberg, Martin
Romero, Fátima
Goldhahn, Rüdiger
Wernicke, Tim
Reich, Christoph
Stellmach, Joachim
Mehnke, Frank
Knauer, Arne
Weyers, Markus
Kneissl, Michael
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/13879
http://dx.doi.org/10.14279/depositonce-12652
License: https://creativecommons.org/licenses/by/4.0/
Abstract: Light emitting diode structures emitting in the ultraviolet spectral range are investigated. The samples exhibit defect luminescence bands. Synchrotron-based photoluminescence excitation spectroscopy of the complicated multi-layer stacks is employed to assign the origin of the observed defect luminescence to certain layers. In the case of quantum well structures emitting at 320 and 290 nm, the n-type contact AlGaN:Si layer is found to be the origin of defect luminescence bands between 2.65 and 2.8 eV. For 230 nm emitters without such n-type contact layer, the origin of a defect double structure at 2.8 and 3.6 eV can be assigned to the quantum wells.
Subject(s): quantum wells
photoluminescence spectroscopy
heterostructures
photoluminescence excitation spectroscopy
light emitting diodes
semiconductors
synchrotron radiation
Issue Date: 17-May-2021
Date Available: 12-Nov-2021
Language Code: en
DDC Class: 530 Physik
Journal Title: Applied Physics Letters
Publisher: American Inst. of Physics
Volume: 118
Issue: 20
Article Number: 202101
Publisher DOI: 10.1063/5.0047021
EISSN: 1077-3118
ISSN: 0003-6951
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik » FG Experimentelle Nanophysik und Photonik
Appears in Collections:Technische Universität Berlin » Publications

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