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Main Title: Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes
Author(s): Römer, Friedhard
Guttmann, Martin
Wernicke, Tim
Kneissl, Michael
Witzigmann, Bernd
Type: Article
Abstract: In the past years, light-emitting diodes (LED) made of GaN and its related ternary compounds with indium and aluminium have become an enabling technology in all areas of lighting. Visible LEDs have yet matured, but research on deep ultraviolet (UV) LEDs is still in progress. The polarisation in the anisotropic wurtzite lattice and the low free hole density in p-doped III-nitride compounds with high aluminium content make the design for high efficiency a critical step. The growth kinetics of the rather thin active quantum wells in III-nitride LEDs makes them prone to inhomogeneous broadening (IHB). Physical modelling of the active region of III-nitride LEDs supports the optimisation by revealing the opaque active region physics. In this work, we analyse the impact of the IHB on the luminescence and carrier transport III-nitride LEDs with multi-quantum well (MQW) active regions by numerical simulations comparing them to experimental results. The IHB is modelled with a statistical model that enables efficient and deterministic simulations. We analyse how the lumped electronic characteristics including the quantum efficiency and the diode ideality factor are related to the IHB and discuss how they can be used in the optimisation process.
Subject(s): light emitting diode
inhomogeneous broadening
numerical modelling
Issue Date: 20-Dec-2021
Date Available: 6-Jan-2022
Language Code: en
DDC Class: 530 Physik
Journal Title: Materials
Publisher: MDPI
Volume: 14
Issue: 24
Article Number: 7890
Publisher DOI: 10.3390/ma14247890
EISSN: 1996-1944
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik » AG Halbleiter Nanophononik und Nanophotonik
Appears in Collections:Technische Universität Berlin » Publications

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