Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-14874
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Main Title: High brightness photonic band crystal semiconductor lasers in the passive mode locking regime
Author(s): Rosales, Ricardo
Kalosha, V. P.
Posilović, Kristijan
Miah, Mohammad Jarez
Bimberg, Dieter
Pohl, J.
Weyers, Markus
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/16100
http://dx.doi.org/10.14279/depositonce-14874
License: http://rightsstatements.org/vocab/InC/1.0/
Abstract: High brightness photonic band crystal lasers in the passive mode locking regime are presented. Optical pulses with peak power of 3 W and peak brightness of about 180 MW cm−2 sr−1 are obtained on a 5 GHz device exhibiting 15 ps pulses and a very low beam divergence in both the vertical and horizontal directions.
Subject(s): heterostructures
second harmonic generation
optical resonators
quantum efficiency
epitaxy
laser physics
semiconductor lasers
optical properties
partial differential equations
quantum wells
Issue Date: 20-Oct-2014
Date Available: 7-Jan-2022
Language Code: en
DDC Class: 530 Physik
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Volume: 105
Issue: 16
Article Number: 161101
Publisher DOI: 10.1063/1.4899129
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 105, 161101 (2014) and may be found at https://doi.org/10.1063/1.4899129.
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik
Appears in Collections:Technische Universität Berlin » Publications

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