Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-14880
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Main Title: Gain dynamics of quantum dot devices for dual-state operation
Author(s): Kaptan, Yücel
Schmeckebier, Holger
Herzog, Bastian
Arsenijević, Dejan
Kolarczik, Mirco
Mikhelashvili, Vissarion
Owschimikow, Nina
Eisenstein, Gadi
Bimberg, Dieter
Woggon, Ulrike
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/16106
http://dx.doi.org/10.14279/depositonce-14880
License: http://rightsstatements.org/vocab/InC/1.0/
Abstract: Ground state gain dynamics of In(Ga)As-quantum dot excited state lasers are investigated via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two-color pump-probe experiments are used to localize lasing and non-lasing quantum dots within the inhomogeneously broadened ground state. Single-color results yield similar gain recovery rates of the ground state for lasing and non-lasing quantum dots decreasing from 6 ps to 2 ps with increasing injection current. We find that ground state gain dynamics are influenced solely by the injection current and unaffected by laser operation of the excited state. This independence is promising for dual-state operation schemes in quantum dot based optoelectronic devices.
Subject(s): emission spectroscopy
optoelectronic devices
electronic transport
electrical properties and parameters
pump probe experiments
scattering
ultrafast pump probe spectroscopy
semiconductor optical amplifiers
quantum dots
laser amplifiers
Issue Date: 1-Jul-2014
Date Available: 7-Jan-2022
Language Code: en
DDC Class: 530 Physik
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Volume: 104
Issue: 26
Article Number: 261108
Publisher DOI: 10.1063/1.4885383
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 104, 261108 (2014) and may be found at https://doi.org/10.1063/1.4885383.
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik
Appears in Collections:Technische Universität Berlin » Publications

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