Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-14895
For citation please use:
Main Title: An integrated evanescent field sensor for the simultaneous measurement of layer refractive index and thickness
Author(s): Jäger, Matthias
Bruns, Jürgen
Schneidewind, Jessica
Pinnow, Cay
Gargouri, Hassan
Petermann, Klaus
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/16121
http://dx.doi.org/10.14279/depositonce-14895
License: https://creativecommons.org/licenses/by/4.0/
Abstract: A novel integrated sensor for the simultaneous measurement of layer refractive index and thickness based on evanescent fields is proposed. The theoretical limits for the accuracy of the sensor were examined for the example of a TiO2 layer. The influence of production tolerance on the accuracy was evaluated. In the experimental part of this work, a sensor chip containing nanowire and nanorib waveguides realized in silicon on insulator technology was used to demonstrate the detection of refractive index and thickness of a TiO2 atomic layer deposition (ALD) layer.
Subject(s): silicon photonics
silicon on insulator
SOI
ring resonator
refractive index sensing
Issue Date: 26-Feb-2021
Date Available: 13-Jan-2022
Language Code: en
DDC Class: 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Sponsor/Funder: DFG, 414044773, Open Access Publizieren 2021 - 2022 / Technische Universität Berlin
Journal Title: Sensors
Publisher: MDPI
Volume: 21
Issue: 5
Article Number: 1628
Publisher DOI: 10.3390/s21051628
EISSN: 1424-8220
TU Affiliation(s): Fak. 4 Elektrotechnik und Informatik » Inst. Hochfrequenz- und Halbleiter-Systemtechnologien » FG Hochfrequenztechnik-Photonik
Appears in Collections:Technische Universität Berlin » Publications

Files in This Item:
sensors-21-01628-v2.pdf
Format: Adobe PDF | Size: 2.41 MB
DownloadShow Preview
Thumbnail

Item Export Bar

This item is licensed under a Creative Commons License Creative Commons