Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-14928
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Main Title: Lateral positioning of InGaAs quantum dots using a buried stressor
Author(s): Strittmatter, André
Schliwa, Andrei
Schulze, J.-H.
Germann, Tim David
Dreismann, A.
Hitzemann, Ole
Stock, Erik
Ostapenko, Irina
Rodt, Sven
Unrau, Waldemar
Pohl, Udo W.
Hoffmann, Axel
Bimberg, Dieter
Haisler, V.
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/16154
http://dx.doi.org/10.14279/depositonce-14928
License: http://rightsstatements.org/vocab/InC/1.0/
Abstract: We present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots (QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation of (Al,Ga)As layers is employed in order to create a locally varying strain field at a GaAs(001) growth surface. During subsequent strained layer growth, local self-organization of (In,Ga)As QDs is controlled by the contour shape of the stressor. Large vertical separation of the QD growth plane from the buried stressor interface of 150 nm is achieved enabling high optical quality of QDs. Optical characterization confirms narrow QD emission lines without spectral diffusion.
Subject(s): statistical mechanics models
chemical elements
free energy
surface strains
microscopy
etching
epitaxy
optical properties
oxides
P-N junctions
Issue Date: 1-Mar-2012
Date Available: 18-Jan-2022
Language Code: en
DDC Class: 530 Physik
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Volume: 100
Issue: 9
Article Number: 093111
Publisher DOI: 10.1063/1.3691251
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 100, 093111 (2012) and may be found at https://doi.org/10.1063/1.3691251.
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik
Appears in Collections:Technische Universität Berlin » Publications

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