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Main Title: Decay dynamics of neutral and charged excitonic complexes in single InAs∕GaAs quantum dots
Author(s): Feucker, M.
Seguin, Robert
Rodt, Sven
Hoffmann, Axel
Bimberg, Dieter
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/16181
http://dx.doi.org/10.14279/depositonce-14955
License: http://rightsstatements.org/vocab/InC/1.0/
Abstract: Systematic time-resolved measurements on neutral and charged excitonic complexes (𝑋, 𝑋𝑋, 𝑋+, and 𝑋𝑋+) of 26 different single InAs∕GaAs quantum dots are reported. The ratios of the decay times are discussed in terms of the number of transition channels determined by the excitonic fine structure and a specific transition time for each channel. The measured ratio for the neutral complexes is 1.7 deviating from the theoretically predicted value of 2. A ratio of 1.5 for the positively charged exciton and biexciton decay time is predicted and exactly matched by the measured ratio indicating identical specific transition times for the transition channels involved.
Subject(s): oscillator strengths
excitons
chemical elements
dark states
selection rule
quantum dots
lenses
semiconductors
degenerate energy levels
radioactive decay
Issue Date: 14-Feb-2008
Date Available: 20-Jan-2022
Language Code: en
DDC Class: 530 Physik
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
EC/FP6/500101/EU/Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics/SANDIE
Journal Title: Applied Physics Letters
Publisher: American Institute of Physics (AIP)
Volume: 92
Issue: 6
Article Number: 063116
Publisher DOI: 10.1063/1.2844886
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 92, 063116 (2008) and may be found at https://doi.org/10.1063/1.2844886.
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik
Appears in Collections:Technische Universität Berlin » Publications

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