Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-14997
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Main Title: In situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy
Author(s): Gschrey, Manuel
Gericke, Fabian
Schüßler, A.
Schmidt, Ronny
Schulze, Jan-Hindrik
Heindel, Tobias
Rodt, Sven
Strittmatter, André
Reitzenstein, Stephan
Type: Article
URI: https://depositonce.tu-berlin.de/handle/11303/16222
http://dx.doi.org/10.14279/depositonce-14997
License: http://rightsstatements.org/vocab/InC/1.0/
Abstract: We report on the deterministic fabrication of sub-μm mesa-structures containing single quantum dots (QDs) by in situ electron-beam lithography. The fabrication method is based on a two-step lithography process: After detecting the position and spectral features of single InGaAs QDs by cathodoluminescence (CL) spectroscopy, circular sub-μm mesa-structures are defined by high-resolution electron-beam lithography and subsequent etching. Micro-photoluminescence spectroscopy demonstrates the high optical quality of the single-QD mesa-structures with emission linewidths below 15 μeV and g(2)(0) = 0.04. Our lithography method has an alignment precision better than 100 nm which paves the way for a fully deterministic device technology using in situ CL lithography.
Subject(s): photoluminescence spectroscopy
emission spectroscopy
monochromators
electron-beam lithography
diffusion barriers
excitons
cathodoluminescence spectroscopy
quantum dots
microoptics
luminescence
Issue Date: 26-Jun-2013
Date Available: 29-Jan-2022
Language Code: en
DDC Class: 530 Physik
Sponsor/Funder: DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Applied Physics Letters (APL)
Publisher: American Institute of Physics (AIP)
Volume: 102
Issue: 25
Article Number: 251113
Publisher DOI: 10.1063/1.4812343
EISSN: 1077-3118
ISSN: 0003-6951
Notes: This content may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This material originally appeared in Appl. Phys. Lett. 102, 251113 (2013) and may be found at https://doi.org/10.1063/1.4812343.
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Festkörperphysik » AG Optoelektronik und Quantenbauelemente
Appears in Collections:Technische Universität Berlin » Publications

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