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Main Title: Synthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silica
Author(s): Baumgarten, Robert
Ingale, Piyush
Knemeyer, Kristian
Naumann d’Alnoncourt, Raoul
Driess, Matthias
Rosowski, Frank
Type: Article
Abstract: The atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaOx, InOx) was deposited using sequential dosing of trimethylgallium or trimethylindium and water at 150 °C. In-situ thermogravimetry provided direct insight into the growth rates and deposition behavior. The highly amorphous and well-dispersed nature of the oxides was shown by XRD and STEM EDX-mappings. N2 sorption analysis revealed that both ALD processes resulted in high specific surface areas while maintaining the pore structure. The stoichiometry of GaOx and InOx was suggested by thermogravimetry and confirmed by XPS. FTIR and solid-state NMR were conducted to investigate the ligand deposition behavior and thermogravimetric data helped estimate the layer thicknesses. Finally, this study provides a deeper understanding of ALD on powder substrates and enables the precise synthesis of high surface area metal oxides for catalytic applications.
Subject(s): atomic layer deposition
metal oxides
high surface area
mesoporous silica
Issue Date: 25-Apr-2022
Date Available: 17-May-2022
Language Code: en
DDC Class: 540 Chemie und zugeordnete Wissenschaften
Sponsor/Funder: DFG, 390540038, EXC 2008: Unifying Systems in Catalysis "UniSysCat"
Journal Title: Nanomaterials
Publisher: MDPI
Volume: 12
Issue: 9
Article Number: 1458
Publisher DOI: 10.3390/nano12091458
EISSN: 2079-4991
TU Affiliation(s): Fak. 2 Mathematik und Naturwissenschaften » Inst. Chemie » FG Metallorganische Chemie und Anorganische Materialien
Appears in Collections:Technische Universität Berlin » Publications

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