Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-15722
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dc.contributor.authorBaumgarten, Robert-
dc.contributor.authorIngale, Piyush-
dc.contributor.authorKnemeyer, Kristian-
dc.contributor.authorNaumann d’Alnoncourt, Raoul-
dc.contributor.authorDriess, Matthias-
dc.contributor.authorRosowski, Frank-
dc.date.accessioned2022-05-17T13:41:55Z-
dc.date.available2022-05-17T13:41:55Z-
dc.date.issued2022-04-25-
dc.identifier.urihttps://depositonce.tu-berlin.de/handle/11303/16943-
dc.identifier.urihttp://dx.doi.org/10.14279/depositonce-15722-
dc.description.abstractThe atomic layer deposition of gallium and indium oxide was investigated on mesoporous silica powder and compared to the related aluminum oxide process. The respective oxide (GaOx, InOx) was deposited using sequential dosing of trimethylgallium or trimethylindium and water at 150 °C. In-situ thermogravimetry provided direct insight into the growth rates and deposition behavior. The highly amorphous and well-dispersed nature of the oxides was shown by XRD and STEM EDX-mappings. N2 sorption analysis revealed that both ALD processes resulted in high specific surface areas while maintaining the pore structure. The stoichiometry of GaOx and InOx was suggested by thermogravimetry and confirmed by XPS. FTIR and solid-state NMR were conducted to investigate the ligand deposition behavior and thermogravimetric data helped estimate the layer thicknesses. Finally, this study provides a deeper understanding of ALD on powder substrates and enables the precise synthesis of high surface area metal oxides for catalytic applications.en
dc.description.sponsorshipDFG, 390540038, EXC 2008: Unifying Systems in Catalysis "UniSysCat"en
dc.language.isoenen
dc.rightsLicensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).-
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en
dc.subject.ddc540 Chemie und zugeordnete Wissenschaftende
dc.subject.otheratomic layer depositionen
dc.subject.otherthermogravimetryen
dc.subject.othermetal oxidesen
dc.subject.otherGa2O3en
dc.subject.otherIn2O3en
dc.subject.othertrimethylgalliumen
dc.subject.othertrimethylindiumen
dc.subject.otherhigh surface areaen
dc.subject.othermesoporous silicaen
dc.titleSynthesis of High Surface Area—Group 13—Metal Oxides via Atomic Layer Deposition on Mesoporous Silicaen
dc.typeArticleen
dc.date.updated2022-05-05T15:52:59Z-
tub.accessrights.dnbfreeen
tub.publisher.universityorinstitutionTechnische Universität Berlinen
dc.identifier.eissn2079-4991-
dc.type.versionpublishedVersionen
dcterms.bibliographicCitation.doi10.3390/nano12091458en
dcterms.bibliographicCitation.journaltitleNanomaterialsen
dcterms.bibliographicCitation.originalpublisherplaceBaselen
dcterms.bibliographicCitation.volume12en
dcterms.bibliographicCitation.originalpublishernameMDPIen
dcterms.bibliographicCitation.issue9en
dcterms.bibliographicCitation.articlenumber1458en
tub.affiliationFak. 2 Mathematik und Naturwissenschaften » Inst. Chemie » FG Metallorganische Chemie und Anorganische Materialiende
Appears in Collections:Technische Universität Berlin » Publications

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