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Main Title: Determination of recombination coefficients in InGaN quantum-well light-emitting diodes by small-signal time-resolved photoluminescence
Author(s): Nippert, Felix
Karpov, Sergey
Pietzonka, Ines
Galler, Bastian
Wilm, Alexander
Kure, Thomas
Nenstiel, Christian
Callsen, Gordon
Strassburg, Martin
Lugauer, Hans-Jürgen
Type: Article
Language Code: en
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Abstract: We suggest a novel technique for the evaluation of the recombination coefficients corresponding to Shockley–Read–Hall, radiative, and Auger recombination that occur in InGaN/GaN-based light-emitting diodes (LEDs). This technique combines the measurement of the LED efficiency as a function of LED drive current with a small-signal time-resolved photoluminescence measurement of the differential carrier life time (DLT). Using the relationships between the efficiency and DLT following from the empirical ABC-model, one can evaluate all three recombination coefficients. The suggested technique is applied to a number of single- and multiple-quantum well LEDs to gain a deeper insight into the mechanisms ultimately limiting their efficiency.
Issue Date: 2016
Date Available: 29-May-2017
DDC Class: 530 Physik
Subject(s): differential carrier lifetime
Journal Title: Japanese Journal of Applied Physics
Publisher: IOP Publ.
Publisher Place: Bristol
Volume: 55
Article Number: 05FJ01
Publisher DOI: 10.7567/JJAP.55.05FJ01
ISSN: 1347-4065
Appears in Collections:Inst. Festkörperphysik » Publications

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