Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-5928
Main Title: Temperature-dependent recombination coefficients in InGaN light-emitting diodes
Subtitle: hole localization, Auger processes, and the green gap
Author(s): Nippert, Felix
Karpov, Sergey Yu.
Callsen, Gordon
Galler, Bastian
Kure, Thomas
Nenstiel, Christian
Wagner, Markus R.
Strassburg, Martin
Lugauer, Hans-Jürgen
Hoffmann, Axel
Type: Article
Language Code: en
Is Part Of: https://doi.org/10.14279/depositonce-5916
Abstract: We obtain temperature-dependent recombination coefficients by measuring the quantum efficiency and differential carrier lifetimes in the state-of-the-art InGaN light-emitting diodes. This allows us to gain insight into the physical processes limiting the quantum efficiency of such devices. In the green spectral range, the efficiency deteriorates, which we assign to a combination of diminishing electronhole wave function overlap and enhanced Auger processes, while a significant reduction in material quality with increased In content can be precluded. Here, we analyze and quantify the entire balance of all loss mechanisms and highlight the particular role of hole localization.
URI: http://depositonce.tu-berlin.de/handle/11303/6378
http://dx.doi.org/10.14279/depositonce-5928
Issue Date: 2016
Date Available: 30-May-2017
DDC Class: DDC::500 Naturwissenschaften und Mathematik::530 Physik::530 Physik
Subject(s): light emitting diodes
III-V semiconductors
multiple quantum wells
wave functions
stark effect
Usage rights: Terms of German Copyright Law
Journal Title: Applied Physics Letters
Publisher: American Inst. of Physics
Publisher Place: Melville, NY
Volume: 109
Issue: 16
Article Number: 161103
Publisher DOI: 10.1063/1.4965298
EISSN: 1077-3118
Appears in Collections:Technische Universität Berlin » Fakultäten & Zentralinstitute » Fakultät 2 Mathematik und Naturwissenschaften » Institut für Festkörperphysik » Publications

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