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Main Title: Evaluation of GaN-HEMT power amplifiers using BST-based components for load modulation
Author(s): Arnous, Mhd. Tareq
Wiens, Alex
Saad, Paul
Preis, Sebastian
Zhang, Zihui
Jakoby, Rolf
Böck, Georg
Type: Article
Language Code: en
Abstract: In this paper, the concept of load-modulated power amplifiers (PAs) is studied. Two GaN-HEMT power amplifiers (PAs), targeted for high efficiency at maximum and output back-off (OBO) power levels, are designed, implemented, and tested across 1.8–2.2 GHz. The load modulation in the first design is realized by tuning the shunt capacitors in the output matching network. A novel method is employed in the second design, where barium–stronrium–titante is used for the realization of load modulation. The large-signal measurement results across the desired band show 59–70% drain efficiency at 44–44.5 dBm output power for both designs. Using the available tunable technique, the drain efficiency of the PAs is enhanced by 4–20% at 6 dB OBO across the bandwidth.
Issue Date: 2014
Date Available: 12-Feb-2018
DDC Class: 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Subject(s): adaptive matching
dynamic load
efficiency enhancement
load modulation
power amplifier
tunable component
Journal Title: International journal of microwave and wireless technologies
Publisher: Cambridge University Press
Publisher Place: Cambridge
Volume: 6
Issue: 3-4
Publisher DOI: 10.1017/s1759078714000518
Page Start: 253
Page End: 263
EISSN: 1759-0795
ISSN: 1759-0787
Notes: Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.
Appears in Collections:FG Mikrowellentechnik » Publications

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