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Main Title: Nitrogen and vacancy clusters in ZnO
Author(s): Tuomisto, Filip
Rauch, Christian
Wagner, Markus R.
Hoffmann, Axel
Eisermann, Sebastian
Meyer, Bruno K.
Kilanski, Lukasz
Tarun, Marianne C.
McCluskey, Matthew D.
Type: Article
Language Code: en
Abstract: Understanding the interaction of group V impurities with intrinsic defects in ZnO is important for developing p-type material. We have studied N-doped ZnO thin films and N-doped bulk ZnO crystals, with positron annihilation spectroscopy, in contrast to earlier studies that have concentrated on N-implanted ZnO crystals. We show that the introduction of N impurities into ZnO, irrespective of whether it is done during the growth of thin films or bulk crystals or through implantation and subsequent thermal treatments, leads to the formation of stable vacancy clusters and negative ion-type defects. Interestingly, the stability of these vacancy clusters is found almost exclusively for N introduction, whereas single Zn vacancy defects or easily removable vacancy clusters are more typically found for ZnO doped with other impurities.
Issue Date: 2013
Date Available: 12-Feb-2018
DDC Class: 670 Industrielle Fertigung
Sponsor/Funder: DFG, SFB 787, Halbleiter - Nanophotonik: Materialien, Modelle, Bauelemente
Journal Title: Journal of Materials Research
Publisher: Cambridge University Press
Publisher Place: Cambridge
Volume: 28
Issue: 15
Publisher DOI: 10.1557/jmr.2013.195
Page Start: 1977
Page End: 1983
EISSN: 2044-5326
ISSN: 0884-2914
Notes: Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.
Appears in Collections:FG Optische Charakterisierung von Halbleitern » Publications

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