Inst. Hochfrequenz- und Halbleiter-Systemtechnologien

182 Items

Recent Submissions
Impact of stochastic transmission effects on the design of digital back propagation

Goroshko, Kseniia (2020)

During the last three decades optical telecommunications industry is constantly pushing for new data transmission capacity limits. With a nowadays paradigm of coherent communication, one of the ways to increase the data rates is closely related to increasing the signal transmission power. That in turns allows reaching higher optical signal-to-noise ratio (OSNR). An intrinsic part of this soluti...

Impairment analysis and mitigation for cost-effective OFDM-based access systems

Duarte Sequeira André, Nuno Miguel (2020)

The growth in broadband connection speed has been exponential, and this trend will continue in the foreseeable future [1]. An access network is a connection between users and service providers and therefore a key element in support of this growth. While expanding its broadband offer a service provider must ensure seamless migration through compatibility with legacy networks, and also create an ...

Fully integrated 240 GHz transmitter and receiver for high data rate communication

Eissa, Mohamed Hussein (2020)

The need for higher data rate wireless communication is increasing rapidly for different kind of applications. Hence the utilization of the wide and unallocated band above 200 GHz opens a lot of opportunities to serve these applications. This work presents the design, implementation and demonstration of fully integrated transmitter and receiver circuits for wireless communication at 240 GHz car...

Investigation of the Mechanical and Electrical Properties of Elastic Textile/Polymer Composites for Stretchable Electronics at Quasi-Static or Cyclic Mechanical Loads

Dils, Christian ; Werft, Lukas ; Walter, Hans ; Zwanzig, Michael ; Krshiwoblozki, Malte von ; Schneider-Ramelow, Martin (2019-11-01)

In the last decade, interest in stretchable electronic systems that can be bent or shaped three-dimensionally has increased. The application of these systems is that they differentiate between two states and derive there from the requirements for the materials used: once formed, but static or permanently flexible. For this purpose, new materials that exceed the limited mechanical properties of ...

Fully integrated BiCMOS high-voltage driver circuits for on-chip RF-MEMS switch matrices

Wipf, Christian (2019)

In this work, building blocks required to control electrostatically actuated radio frequency micro- electro- mechanical system (RF-MEMS) matrices were developed and integrated into demonstrator circuits. The realized chips include the high-voltage (HV) generation and switching units integrated together with the RF-MEMS switches. To the author’s knowledge, this work is the first to present monol...

Untersuchung der Degradation von InAlGaN-basierten ultravioletten Leuchtdioden zur Verbesserung der Zuverlässigkeit

Glaab, Johannes (2019)

Zentraler Bestandteil dieser Arbeit ist die Untersuchung des Degradationsverhaltens von ultravioletten (UV) Leuchtdioden (LEDs), die im UV-C (200 nm bis 280 nm) und UV-B (280 nm bis 340 nm) Spektralbereich emittieren. Als Degradationsverhalten ist dabei die Änderung von elektrooptischen Parametern, wie beispielsweise der optischen Leistung oder der Strom-Spannungskennlinie im Betrieb bei konsta...

Laser-based attacks on secure integrated circuits

Lohrke, Heiko (2019)

To defend against attackers, knowledge about their approach is helpful. This work evaluates attacks on integrated circuits (ICs) using laser scanning microscopes (LSMs) in combination with semiconductor failure analysis (FA) techniques. It identifies likely attack paths, develops suitable setups, and tests attack feasibility. All attacks are performed through the silicon backside. Three main at...

Optimierung von koplanaren GaN-MMIC-Leistungsverstärkern im X-Band

Ersoy, Erhan (2019)

Seit der Erfindung des Transistors haben diese Halbleiter-Bauteile mit fortschreitender Entwicklung die bis dato in Verstärkern verwendeten Bauteile, die Elektronenröhren, immer mehr verdrängt. Als ein weiterer Schritt dieser Entwicklung findet im X-Band (8 bis 12 GHz) die Verdrängung in Radar- und Satellitenanwendungen statt. Für den Einsatz in solchen Anwendungen werden Leistungsverstärker in...

Schaltungsentwurf und Aufbautechnologie hocheffizienter GaN-HEMT Leistungsverstärker in MIC-Technologie

Rautschke, Felix (2019)

Diese Dissertation ist das Ergebnis von mehr als drei Jahren Forschung und Entwicklung an der Technischen Universität Berlin, Fachgebiet Mikrowellentechnik. Während dieser Zeit wurden hochfrequente, hybride Leistungsverstärker auf Basis von Gallium-Nitrid HEMT Technologie der Firma Wolfspeed im Ku-Band und X-Band entwickelt und aufgebaut. Das hybride Design der Verstärkerstufen stützt sich auf ...

High-performance transceiver front-ends in SiGe technologies for 400Gb/s optical links

García López, Iria (2019)

Die optische Glasfaserkommunikation ist ein wichtiger Bestandteil in der heutigen industriellen Entwicklung und des wirtschaftlichen Fortschrittes in unserer modernen Gesellschaft geworden. Um die Anforderungen des zunehmenden Datenverkehrs zu erfüllen, die für Anwendungen wie das Internet der Dinge (IoT) und Cloud-Computing benötigt werden, müssen die Bandbreite, die Leistungsaufnahme und die ...

SiGe BiCMOS integrated circuits for optical communication transmitters

Vieira Rito, Pedro Filipe (2019)

Telecommunications play a crucial role in our daily lives, not only because of their significance in allowing interaction between all of us, but also due to the forthcoming expansion of connection and exchange of data between machines, the so-called Internet of Things (IoT), which will result in a massive network of thousands of millions of devices around the world. Such growth of the internet ...

Design and Fabrication of a BiCMOS Dielectric Sensor for Viscosity Measurements: A Possible Solution for Early Detection of COPD

Soltani Zarrin, Pouya ; Jamal, Farabi Ibne ; Guha, Subhajit ; Wessel, Jan ; Kissinger, Dietmar ; Wenger, Christian (2018-08-21)

The viscosity variation of sputum is a common symptom of the progression of Chronic Obstructive Pulmonary Disease (COPD). Since the hydration of the sputum defines its viscosity level, dielectric sensors could be used for the characterization of sputum samples collected from patients for early diagnosis of COPD. In this work, a CMOS-based dielectric sensor for the real-time monitoring of sputum...

Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

Hu, Xiaodong ; Mackowiak, Piotr ; Bäuscher, Manuel ; Ehrmann, Oswin ; Lang, Klaus-Dieter ; Schneider-Ramelow, Martin ; Linke, Stefan ; Ngo, Ha-Duong (2018-05-28)

In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal p...

Broadband concepts for high efficiency microwave power amplifiers using Gallium nitride technology

Arnous, Mohammed Tareq (2019)

Power amplifier units are the most important components in mobile radio base stations (RBSs). Their performance affects the overall performance of the base station in terms of output power and efficiency. A special high interest is the combination of high efficiency and wide bandwidth. This dissertation is dedicated to this central problem. First, the design and characterization of a single-end...

Thermische Untersuchung von Schaltungsträgern für leistungselektronische Halbleitermodule mit organischem Isolator

Bicakci, Aylin (2019)

Aufgrund der stetig steigenden Leistungsdichte in der Leistungselektronik sind immer höhere Temperaturen der Halbleiter in Leistungsmodulen die Folge, welche zu einer Leistungsbeschränkung der heutigen Module führen. Konventionelle Module bestehen häufig aus einem Direct Copper Bonded-Substrat (DCB), welches auf eine Bodenplatte (Wärmespreizer) gelötet ist. Diese Module sind aus thermischer Sic...

Materialaspekte der Hydridgasphasenepitaxie von Aluminiumgalliumnitrid

Fleischmann, Simon (2019)

In dieser Arbeit wurden Aspekte zur Verbesserung der Materialqualität von AlGaN-Schichten untersucht, die mittels HVPE abgeschieden wurden. Diese umfassten einerseits die Strukturierung von Saphirsubstraten und die Prozessschritte Pufferschicht und Kompositionsvariationen sowie andererseits die Wahl des Reaktormaterials zu Vermeidung von parasitären Reaktionen und Fremdatomeinbau. Zunächst wur...

Investigation of perovskite-CIGSe tandem solar cells

Wang, Yajie (2019)

Multi-junction photovoltaic devices have received much attention for a long time due to their potential performance beyond the Shockley-Queisser (S-Q) limit compared with the current (commercially available) single junction solar cells. Thin film solar cells based on polycrystalline Cu(In,Ga)(S,Se)2 (CIGSe) absorbers and hybrid organic-inorganic perovskite solar cells have reached power convers...

Optical feedback effects within 1.55 μm InP-based DFB laser integrated Mach-Zehnder modulators for up to 100 GBd data transmission

Lange, Sophie Gloria (2019)

Indium phosphide-based 1550 nm wavelength optical transmitters are developed, suitable for next generation transceiver modules for intra- and inter-data center connections from a few kilometers to tens of kilometers range. The challenges of designing high-speed, low power and low-cost transceivers for future data centers are met by integrating a high bandwidth and low switching voltage travelli...

GaAs-based components for photonic integrated circuits

Arar, Bassem (2019)

Semiconductor lasers based on GaAs/AlGaAs double heterostructures have recently received increasing interest for atomic spectroscopy applications. For example GaAs/AlGaAs double heterostructure laser radiation at the wavelengths of 780 nm and 1064 nm is used for rubidium spectroscopy, and for molecular iodine spectroscopy (at 532 nm using frequency-doubling techniques), respectively. Optical sy...

A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power

Eissa, Mohamed Hussein ; Malignaggi, Andrea ; Ko, Minsu ; Schmalz, Klaus ; Borngräber, Johannes ; Ulusoy, Ahmet Cagri ; Kissinger, Dietmar (2018-03-05)

This work presents a fully differential wideband and low power 240 GHz multiplier-by-8 chain, manufactured in IHP's 130 nm SiGe:C BiCMOS technology with fT/fmax = 300/500 GHz. A single ended 30 GHz input signal is multiplied by 8 using Gilbert cell-based quadrupler and doubler, and then amplified with a wideband differential 3-stage cascode amplifier. To achieve wide bandwidth and optimize for ...