Inst. Hochfrequenz- und Halbleiter-Systemtechnologien

171 Items

Recent Submissions
Design and Fabrication of a BiCMOS Dielectric Sensor for Viscosity Measurements: A Possible Solution for Early Detection of COPD

Soltani Zarrin, Pouya ; Jamal, Farabi Ibne ; Guha, Subhajit ; Wessel, Jan ; Kissinger, Dietmar ; Wenger, Christian (2018-08-21)

The viscosity variation of sputum is a common symptom of the progression of Chronic Obstructive Pulmonary Disease (COPD). Since the hydration of the sputum defines its viscosity level, dielectric sensors could be used for the characterization of sputum samples collected from patients for early diagnosis of COPD. In this work, a CMOS-based dielectric sensor for the real-time monitoring of sputum...

Design and Application of a High-G Piezoresistive Acceleration Sensor for High-Impact Application

Hu, Xiaodong ; Mackowiak, Piotr ; Bäuscher, Manuel ; Ehrmann, Oswin ; Lang, Klaus-Dieter ; Schneider-Ramelow, Martin ; Linke, Stefan ; Ngo, Ha-Duong (2018-05-28)

In this paper, we present our work developing a family of silicon-on-insulator (SOI)–based high-g micro-electro-mechanical systems (MEMS) piezoresistive sensors for measurement of accelerations up to 60,000 g. This paper presents the design, simulation, and manufacturing stages. The high-acceleration sensor is realized with one double-clamped beam carrying one transversal and one longitudinal p...

Broadband concepts for high efficiency microwave power amplifiers using Gallium nitride technology

Arnous, Mohammed Tareq (2019)

Power amplifier units are the most important components in mobile radio base stations (RBSs). Their performance affects the overall performance of the base station in terms of output power and efficiency. A special high interest is the combination of high efficiency and wide bandwidth. This dissertation is dedicated to this central problem. First, the design and characterization of a single-end...

Thermische Untersuchung von Schaltungsträgern für leistungselektronische Halbleitermodule mit organischem Isolator

Bicakci, Aylin (2019)

Aufgrund der stetig steigenden Leistungsdichte in der Leistungselektronik sind immer höhere Temperaturen der Halbleiter in Leistungsmodulen die Folge, welche zu einer Leistungsbeschränkung der heutigen Module führen. Konventionelle Module bestehen häufig aus einem Direct Copper Bonded-Substrat (DCB), welches auf eine Bodenplatte (Wärmespreizer) gelötet ist. Diese Module sind aus thermischer Sic...

Materialaspekte der Hydridgasphasenepitaxie von Aluminiumgalliumnitrid

Fleischmann, Simon (2019)

In dieser Arbeit wurden Aspekte zur Verbesserung der Materialqualität von AlGaN-Schichten untersucht, die mittels HVPE abgeschieden wurden. Diese umfassten einerseits die Strukturierung von Saphirsubstraten und die Prozessschritte Pufferschicht und Kompositionsvariationen sowie andererseits die Wahl des Reaktormaterials zu Vermeidung von parasitären Reaktionen und Fremdatomeinbau. Zunächst wur...

Investigation of perovskite-CIGSe tandem solar cells

Wang, Yajie (2019)

Multi-junction photovoltaic devices have received much attention for a long time due to their potential performance beyond the Shockley-Queisser (S-Q) limit compared with the current (commercially available) single junction solar cells. Thin film solar cells based on polycrystalline Cu(In,Ga)(S,Se)2 (CIGSe) absorbers and hybrid organic-inorganic perovskite solar cells have reached power convers...

Optical feedback effects within 1.55 μm InP-based DFB laser integrated Mach-Zehnder modulators for up to 100 GBd data transmission

Lange, Sophie Gloria (2019)

Indium phosphide-based 1550 nm wavelength optical transmitters are developed, suitable for next generation transceiver modules for intra- and inter-data center connections from a few kilometers to tens of kilometers range. The challenges of designing high-speed, low power and low-cost transceivers for future data centers are met by integrating a high bandwidth and low switching voltage travelli...

GaAs-based components for photonic integrated circuits

Arar, Bassem (2019)

Semiconductor lasers based on GaAs/AlGaAs double heterostructures have recently received increasing interest for atomic spectroscopy applications. For example GaAs/AlGaAs double heterostructure laser radiation at the wavelengths of 780 nm and 1064 nm is used for rubidium spectroscopy, and for molecular iodine spectroscopy (at 532 nm using frequency-doubling techniques), respectively. Optical sy...

A 216–256 GHz fully differential frequency multiplier-by-8 chain with 0 dBm output power

Eissa, Mohamed Hussein ; Malignaggi, Andrea ; Ko, Minsu ; Schmalz, Klaus ; Borngräber, Johannes ; Ulusoy, Ahmet Cagri ; Kissinger, Dietmar (2018-03-05)

This work presents a fully differential wideband and low power 240 GHz multiplier-by-8 chain, manufactured in IHP's 130 nm SiGe:C BiCMOS technology with fT/fmax = 300/500 GHz. A single ended 30 GHz input signal is multiplied by 8 using Gilbert cell-based quadrupler and doubler, and then amplified with a wideband differential 3-stage cascode amplifier. To achieve wide bandwidth and optimize for ...

New TCO for use as transparent front contact in chalcopyrite thin film solar cells

Erfurt, Darja (2019)

In this thesis the applicability of high-mobility indium oxide based transparent conductive oxides (TCOs) as front contact in Cu(In,Ga)(S,Se)2 (CIGS) solar cells and modules was investigated. The unique trade-off between optical and electrical properties promises improved short circuit current densities compared to conventional CIGS device configurations, in particular in CIGS modules. By dopin...

Octave bandwidth S- and C-band GaN-HEMT power amplifiers for future 5G communication

Rautschke, Felix ; May, Stefan ; Drews, Sebastian ; Maaßen, Daniel ; Böck, Georg (2018-06-21)

In this contribution, a design methodology for octave-bandwidth power amplifiers (PA) for 5G communication systems using surface mount dual-flat-no-lead packaged gallium-nitride high-electron-mobility transistor devices is presented. Systematic source- and load-pull simulations have been used to find the optimum impedances across 75% fractional bandwidth for S- (1.9–4.2 GHz) and C-band (3.8–8.4...

Development and characterisation of a diode laser based tunable high-power MOPA system

Tawfieq, Mahmoud (2019)

The aim of this work is to develop and characterize widely tunable high power diode lasers emitting at 976 nm, to serve in non-linear frequency conversion applications. In particular, to serve as pump sources in infrared upconversion detection systems. This is realized by a master oscillator power amplifier (MOPA) configuration, where the MO provides the wavelength stabilization and tuning, whi...

Crystallisation Phenomena of In2O3:H Films

Muydinov, Ruslan ; Steigert, Alexander ; Wollgarten, Markus ; Michałowski, Paweł Piotr ; Bloeck, Ulrike ; Pflug, Andreas ; Erfurt, Darja ; Klenk, Reiner ; Körner, Stefan ; Lauermann, Iver ; Szyszka, Bernd (2019-01-15)

The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary...

Realisierung eines piezo-resistiven Niederdruck-Sensors in der SOI-Technologie zum Einsatz in Hochtemperatur- und aggressiver Umgebung

Mukhopadhyay, Biswajit (2019)

Es besteht seitens der Automobil- und Kunststoffindustrie seit geraumer Zeit ein großer Bedarf an hochtemperaturtauglichen Drucksensorsystemen, welche z.B. im Motoreinlass und –auslass sowie RIM (Reaction Injection Moulding) eingesetzt werden können. Solche Hochtemperaturdrucksensoren können z.B. helfen, die Schadstoffemission und den Verbrauch von Verbrennungsmotoren zu reduzieren. Im Rahmen ...

Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer

Arnous, Mhd Tareq ; Zhang, Zihui ; Rautschke, Felix ; Böck, Georg (2017)

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a fla...

Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications

Tolunay Wipf, Selin ; Göritz, Alexander ; Wietstruck, Matthias ; Wipf, Christian ; Tillack, Bernd ; Mai, Andreas ; Kaynak, Mehmet (2017)

In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alterna...

Design and layout strategies for integrated frequency synthesizers with high spectral purity

Herzel, Frank ; Kissinger, Dietmar (2017)

Design guidelines for fractional-N phase-locked loops with a high spectral purity of the output signal are presented. Various causes for phase noise and spurious tones (spurs) in integer-N and fractional-N phase-locked loops (PLLs) are briefly described. These mechanisms include device noise, quantization noise folding, and noise coupling from charge pump (CP) and reference input buffer to the ...

Optimization of broad-area GaAs diode lasers for high powers and high efficiencies in the temperature range 200-220 K

Frevert, Carlo (2018)

GaAs-based high-power broad area (BA) diode lasers are the most efficient light source in converting electrical into optical energy. Their high power densities, small footprint and high reliability make them essential tools for industrial and scientific applications. In addition, their adjustable wavelength (by choice of semiconductor material) enables their use as optical pumps for a wide rang...

GaN-HEMT power amplifiers and smart transmitters for Ku-band satellite communication

Maaßen, Daniel (2018)

Within this contribution the design, implementation, and experimental results of a satellite communication (SatCom) power amplifier (PA), block upconverter (BUC) as well as an evaluation within the satellite link are described. Three Ku-band GaN-HEMT PAs are presented. A two stage design approach with two 250 nm bare-die devices has been chosen to achieve a considerably high saturated gain of 1...

Concept development and implementation of online monitoring methods in the transfer molding process for electronic packages

Kaya, Burcu (2018)

The transfer molding process is one of the major processes for the encapsulation of electronic packages. To provide a structural support and to protect the electronic components from the environment, epoxy molding compounds (EMCs) are mainly used as encapsulation material. The quality of the molded packages depends strongly on the process parameters of the transfer molding process and also the ...