Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-6806
Main Title: The Influence of ITO Dopant Density on J-V Characteristics of Silicon Heterojunction Solar Cells: Experiments and Simulations
Author(s): Kirner, Simon
Hartig, Manuel
Mazzarella, Luana
Korte, Lars
Frijnts, Tim
Scherg-Kurmes, Harald
Ring, Sven
Stannowski, Bernd
Rech, Bernd
Schlatmann, Rutger
Type: Article
Language Code: en
Abstract: The TCO/a-Si:H(p) contact is a critical part of the silicon heterojunction solar cell. At this point, holes from the emitter have to recombine loss free with electrons from the TCO. Since tunneling is believed to be the dominant transport mechanism, a high dopant density in both adjacent layers is critical. In contrast to this, it has been reported that high TCO dopant density can reduce field effect passivation induced by the a-Si:H(p) layer. Thus, in this publication, we systematically investigate the influence of a thin (∼10 nm) ITO contact layer with dopant densities ranging from Nd = 1019 - 1021 cm-3 placed between an ITO bulk layer of 70 nm with Nd= 2·1020 cm-3 and the a-Si:H(p) emitter on the J-V characteristics, with the aim to find an optimum Nd. We accompanied our experiments by AFORS-HET simulations, considering trap-assisted tunneling and field dependent mobilities in the a-Si:H(p) layer. As expected, two regimes are visible: For low Nd the devices are limited by inefficient tunneling, resulting in S-shaped J-V characteristics. For high Nd a reduction of the field effect passivation becomes visible in the low injection range. We can qualitatively reproduce these findings using device simulations.
URI: https://depositonce.tu-berlin.de//handle/11303/7616
http://dx.doi.org/10.14279/depositonce-6806
Issue Date: 2015
Date Available: 19-Apr-2018
DDC Class: 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Subject(s): silicon hetero junction solar cells
HIT
TCO/a-Si:H(p) contact
ITO
tunneling
AFORS-HET
License: https://creativecommons.org/licenses/by-nc-nd/4.0/
Journal Title: Energy Procedia
Publisher: Elsevier BV
Publisher Place: Amsterdam [u.a.]
Volume: 77
Publisher DOI: 10.1016/j.egypro.2015.07.103
Page Start: 725
Page End: 732
ISSN: 1876-6102
Appears in Collections:FG Technologie für Dünnschicht-Bauelemente » Publications

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