Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-8138
Main Title: Crystallisation Phenomena of In2O3:H Films
Author(s): Muydinov, Ruslan
Steigert, Alexander
Wollgarten, Markus
Michałowski, Paweł Piotr
Bloeck, Ulrike
Pflug, Andreas
Erfurt, Darja
Klenk, Reiner
Körner, Stefan
Lauermann, Iver
Szyszka, Bernd
Type: Article
Language Code: en
Abstract: The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infraredspectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O•• and (OH−)O• point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.
URI: https://depositonce.tu-berlin.de//handle/11303/9028
http://dx.doi.org/10.14279/depositonce-8138
Issue Date: 15-Jan-2019
Date Available: 20-Feb-2019
DDC Class: 600 Technik, Technologie
Subject(s): In2O3:H
thin films
crystallisation
TCO
high mobility
Sponsor/Funder: DFG, 414044773, Open Access Publizieren 2019 - 2020 / Technische Universität Berlin
License: https://creativecommons.org/licenses/by/4.0/
Journal Title: Materials
Publisher: MDPI
Publisher Place: Basel
Volume: 12
Issue: 2
Article Number: 266
Publisher DOI: 10.3390/ma12020266
EISSN: 1996-1944
Appears in Collections:FG Technologie für Dünnschicht-Bauelemente » Publications

Files in This Item:
File Description SizeFormat 
materials-12-00266.pdf3.49 MBAdobe PDFView/Open


This item is licensed under a Creative Commons License Creative Commons