Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-8194
Main Title: Electromagnetic and small-signal modeling of an encapsulated RF-MEMS switch for D-band applications
Author(s): Tolunay Wipf, Selin
Göritz, Alexander
Wietstruck, Matthias
Wipf, Christian
Tillack, Bernd
Mai, Andreas
Kaynak, Mehmet
Type: Article
Language Code: en
Abstract: In this work, an electromagnetic (EM) model and a small-signal (lumped-element) model of a wafer-level encapsulated (WLE) radio frequency microelectromechanical systems (RF-MEMS) switch is presented. The EM model of the WLE RF-MEMS switch is developed to estimate its RF performance. After the fabrication of the switch, the EM model is used to get accurate S-parameter simulation results. Alternative to the EM model, a small-signal model of the fabricated WLE RF-MEMS switch is developed. The developed model is integrated into a 0.13 µm SiGe BiCMOS process technology design kit for fast simulations and to predict the RF performance of the switch from a pure electrical point of view. The 0.13 µm SiGe BiCMOS embedded WLE RF-MEMS shows beyond state-of-the-art measured RF performances in D-band (110–170 GHz) and provides a high capacitance Con/Coff ratio of 11.1. The results of the both EM model and small-signal model of the switch are in very good agreement with the S-parameter measurements in D-band. The measured maximum isolation of the WLE RF-MEMS switch is 51.6 dB at 142.8 GHz with an insertion loss of 0.65 dB.
URI: https://depositonce.tu-berlin.de//handle/11303/9093
http://dx.doi.org/10.14279/depositonce-8194
Issue Date: 2017
Date Available: 11-Feb-2019
DDC Class: 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Subject(s): BiCMOS
mm-wave
wide band
RF-MEMS
SPST
encapsulation
monolithic integration
packaging
modeling
Sponsor/Funder: EC/FP7/288531/EU/Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems/NANOTEC
License: http://rightsstatements.org/vocab/InC/1.0/
Journal Title: International Journal of Microwave and Wireless Technologies
Publisher: Cambridge University Press
Volume: 9
Issue: 6
Publisher DOI: 10.1017/S1759078717000137
Page Start: 1271
Page End: 1278
EISSN: 1759-0795
ISSN: 1759-0787
Notes: Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.
Appears in Collections:Inst. Hochfrequenz- und Halbleiter-Systemtechnologien » Publications

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