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Main Title: Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
Author(s): Arnous, Mhd Tareq
Zhang, Zihui
Rautschke, Felix
Böck, Georg
Type: Article
Language Code: en
Abstract: In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.
Issue Date: 2017
Date Available: 11-Feb-2019
DDC Class: 620 Ingenieurwissenschaften und zugeordnete Tätigkeiten
Sponsor/Funder: EC/FP7/288531/EU/Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems/NANOTEC
Journal Title: International Journal of Microwave and Wireless Technologies
Publisher: Cambridge University Press
Volume: 9
Issue: 6
Publisher DOI: 10.1017/S1759078717000125
Page Start: 1261
Page End: 1269
EISSN: 1759-0795
ISSN: 1759-0787
Notes: Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.
This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.
Appears in Collections:FG Mikrowellentechnik » Publications

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