Please use this identifier to cite or link to this item: http://dx.doi.org/10.14279/depositonce-8781
Main Title: Effect of Electron Blocking Layer Doping and Composition on the Performance of 310 nm Light Emitting Diodes
Author(s): Kolbe, Tim
Knauer, Arne
Rass, Jens
Cho, Hyun
Hagedorn, Sylvia
Einfeldt, Sven
Kneissl, Michael
Weyers, Markus
Type: Article
Language Code: en
Abstract: The effects of composition and p-doping profile of the AlGaN:Mg electron blocking layer (EBL) in 310 nm ultraviolet B (UV-B) light emitting diodes (LEDs) have been investigated. The carrier injection and internal quantum efficiency of the LEDs were simulated and compared to electroluminescence measurements. The light output power depends strongly on the temporal biscyclopentadienylmagnesium (Cp 2 Mg) carrier gas flow profile during growth as well as on the aluminum profile of the AlGaN:Mg EBL. The highest emission power has been found for an EBL with the highest Cp 2 Mg carrier gas flow and a gradually decreasing aluminum content in direction to the p-side of the LED. This effect is attributed to an improved carrier injection and confinement that prevents electron leakage into the p-doped region of the LED with a simultaneously enhanced carrier injection into the active region.
URI: https://depositonce.tu-berlin.de/handle/11303/9748
http://dx.doi.org/10.14279/depositonce-8781
Issue Date: 6-Dec-2017
Date Available: 9-Aug-2019
DDC Class: 600 Technik, Technologie
Subject(s): light emitting diode
LED
ultraviolet
UV
electron blocking layer
EBL
MOVPE
doping
simulation
heterostructure
Sponsor/Funder: BMBF, 03ZZ0105A, Zwanzig20 - Advanced UV for Life - Verbundvorhaben - UV-B effizient; TP1: UV-B-LEDs hoher Ausbeute, Effizienz und Leistung (UV-B Effizient) Effiziente Prozesse für Basisschichten und Chipherstellung
BMBF, 03ZZ0130A, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: Zuverlässigkeit von UV-LEDs; TP1: Analyse von Degradationsmechanismen in UVB- und UVC-LEDs
BMBF, 03ZZ0134B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben: UV Power; TP2: Entwicklung von high-power UVB-LEDs um 300 nm
License: https://creativecommons.org/licenses/by/4.0/
Journal Title: Materials
Publisher: MDPI
Publisher Place: Basel
Volume: 10
Issue: 12
Article Number: 1396
Publisher DOI: 10.3390/ma10121396
EISSN: 1996-1944
Appears in Collections:FG Experimentelle Nanophysik und Photonik » Publications

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